FDP20N50_07资料

FDP20N50 / FDPF20N50 500V N-Channel MOSFETFebruary 2007FDP20N50 / FDPF20N50500V N-Channel MOSFETFeatures•20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V•Low gate charge ( typical 45.6 nC)•LowCrss ( typical 27 pF)•Fastswitching•100% avalanche tested•Improved dv/dt capabilityUniFETDescriptionTMThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary, planarstripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies and active power factorcorrection.DG GDSTO-220FDP SeriesGDSTO-220FFDPF SeriesSAbsolute Maximum RatingsSymbolVDSSIDIDMVGSSEASIAREARdv/dtPDTJ, TSTGTLDrain-Source VoltageDrain CurrentDrain CurrentGate-Source voltageSingle Pulsed Avalanche EnergyAvalanche CurrentRepetitive Avalanche EnergyPeak Diode Recovery dv/dtPower Dissipation(TC = 25°C)- Derate above 25°C(Note 2)(Note 1)(Note 1)(Note 3)Parameter- Continuous (TC = 25°C)- Continuous (TC = 100°C)- Pulsed(Note 1)FDP20N505002012.980±30FDPF20N5020 *12.9󰀁󰀋80󰀁󰀋UnitVAAAVmJAmJV/ns111020254.52502.0-55 to +150300620.5WW/°C°C°COperating and Storage Temperature RangeMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds* Drain current limited by maximum junction temperatureThermal CharacteristicsSymbolRθJCRθCSRθJAParameterThermal Resistance, Junction-to-CaseThermal Resistance, Case-to-Sink Typ.Thermal Resistance, Junction-to-AmbientFDP20N500.50.562.5FDPF20N502.0--62.5Unit°C/W°C/W°C/W©2007 Fairchild Semiconductor Corporation1www.fairchildsemi.com

FDP20N50 / FDPF20N50 Rev. B

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FDP20N50 / FDPF20N50 500V N-Channel MOSFETPackage Marking and Ordering Information

Device Marking

FDP20N50FDPF20N50

Device

FDP20N50FDPF20N50

Package

TO-220TO-220F

Reel Size

--

Tape Width

--

Quantity

5050

Electrical Characteristics T = 25°C unless otherwise noted

C

Symbol

Off CharacteristicsBVDSS∆BVDSS/ ∆TJIDSSIGSSFIGSSRVGS(th)RDS(on)gFSCissCossCrsstd(on)trtd(off)tfQgQgsQgdISISMVSDtrrQrr

NOTES:

Parameter

Drain-Source Breakdown VoltageBreakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain CurrentGate-Body Leakage Current, ForwardGate-Body Leakage Current, ReverseGate Threshold VoltageStatic Drain-SourceOn-Resistance

Forward TransconductanceInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceTurn-On Delay TimeTurn-On Rise TimeTurn-Off Delay TimeTurn-Off Fall TimeTotal Gate ChargeGate-Source ChargeGate-Drain Charge

Conditions

VGS = 0V, ID = 250µA

ID = 250µA, Referenced to 25°CVDS = 500V, VGS = 0VVDS = 400V, TC = 125°CVGS = 30V, VDS = 0VVGS = -30V, VDS = 0VVDS = VGS, ID = 250µAVGS = 10V, ID = 10AVDS = 40V, ID = 10AVDS = 25V, VGS = 0V,f = 1.0MHz

(Note 4)

Min.

500----------3.0----------

Typ.

--0.5----------0.2024.62400355279537510010545.614.821.6

MaxUnits

----110100-1005.00.23--3120465--20076021022059.5----VV/°CµAµAnAnAVΩSpFpFpFnsnsnsnsnCnCnC

On Characteristics

Dynamic Characteristics

Switching Characteristics

VDD = 250V, ID = 20ARG = 25Ω

------(Note 4, 5)

--------

VDS = 400V, ID = 20AVGS = 10V

(Note 4, 5)

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward CurrentMaximum Pulsed Drain-Source Diode Forward CurrentDrain-Source Diode Forward VoltageReverse Recovery TimeReverse Recovery Charge

VGS = 0V, IS = 20A

VGS = 0V, IS = 20A

dIF/dt =100A/µs (Note 4)

----------------5077.20

20801.4----AAVnsµC

1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 5.0mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDP20N50 / FDPF20N50 Rev. B

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FDP20N50 / FDPF20N50 500V N-Channel MOSFETTypical Performance CharacteristicsFigure 1. On-Region Characteristics VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 VFigure 2. Transfer Characteristics 102ID, Drain Current [A]ID, Drain Current [A]101150C1o 10100* Notes : 1. 250µs Pulse Test 2. TC = 25Co* Notes : 1. VDS = 40V 2. 250µs Pulse Test10-110010110024681012VDS, Drain-Source Voltage [V]VGS, Gate-Source Voltage [V]Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward VoltageDrain Current and Gate VoltageVariation vs. Source Current and Temperatue 0.8 RDS(ON) [Ω],Drain-Source On-Resistance0.6VGS = 10V0.4IDR, Reverse Drain Current [A]101 150Co25CoVGS = 20V0.2* Note : TJ = 25Co*Notes : 1. VGS = 0V 2. 250µs Pulse Test0.001530456075901000.20.40.60.81.01.21.41.6ID, Drain Current [A]VSD, Source-Drain voltage [V]Figure 5. Capacitance Characteristics 6000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdFigure 6. Gate Charge Characteristics12VDS = 100V10VGS, Gate-Source Voltage [V]5000Crss = CgdVDS = 250VVDS = 400VCossCapacitances [pF]40008Ciss30006 2000* Note : 1. VGS = 0 V41000Crss 2. f = 1 MHz2* Note : ID = 20A0-110100101001020304050VDS, Drain-Source Voltage [V]QG, Total Gate Charge [nC]FDP20N50 / FDPF20N50 Rev. B

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FDP20N50 / FDPF20N50 500V N-Channel MOSFETTypical Performance Characteristics (Continued)Figure 7. Breakdown Voltage Variationvs. Temperature 1.23.0Figure 8. On-Resistance Variation vs. Temperature BVDSS, (Normalized)Drain-Source Breakdown Voltage1.1RDS(ON), (Normalized)Drain-Source On-Resistance2.52.01.01.5 1.00.9* Notes : 1. VGS = 0 V 2. ID = 250µA0.5* Notes : 1. VGS = 10 V 2. ID = 10 A0.8-100-50050100o1502000.0-100-50050100o150200TJ, Junction Temperature [C]TJ, Junction Temperature [C] Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area - FDP20N50 - FDPF20N50 2 1021010 µs10 µsID, Drain Current [A]ID, Drain Current [A]100 µs1 ms101101100 µs1 ms10 ms100 msDCOperation in This Area is Limited by R DS(on)10 ms100 msDC100Operation in This Area is Limited by R DS(on) 100* Notes :o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulseo10-1* Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulseoo10-110010110210310-2100101102VDS, Drain-Source Voltage [V]VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Currentvs. Case Temperature 2520ID, Drain Current [A]151050255075100o125150TC, Case Temperature [C] FDP20N50 / FDPF20N50 Rev. B

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FDP20N50 / FDPF20N50 500V N-Channel MOSFETTypical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve - FDP20N50 100(t), Thermal ResponseD=0.50.20.10.050.020.01single pulse* Notes : 1. ZθJC(t) = 0.5 C/WMax. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZθJC(t)o10-1t1t2θJC10-2Z10-510-410-310-210-1100101t1, Square Wave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve - FDPF20N50 100D=0.50.20.1ZθJC(t), Thermal Response10-10.050.020.01PDMt1* Notes :t2o10-2single pulse 1. ZθJC(t) = 2.0C/WMax. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZθJC(t)10-510-410-310-210-1100101t1, Square Wave Pulse Duration [sec]FDP20N50 / FDPF20N50 Rev. B

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FDP20N50 / FDPF20N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP20N50 / FDPF20N50 Rev. B

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FDP20N50 / FDPF20N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDP20N50 / FDPF20N50 Rev. B

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FDP20N50 / FDPF20N50 500V N-Channel MOSFETMechanical DimensionsTO-2209.90 ±0.201.30 ±0.102.80 ±0.10(8.70)ø3.60 ±0.10(1.70)4.50 ±0.201.30–0.05+0.109.20 ±0.20(1.46)13.08 ±0.20(1.00)(3.00)15.90 ±0.201.27 ±0.101.52 ±0.100.80 ±0.102.54TYP[2.54 ±0.20]2.54TYP[2.54 ±0.20]10.08 ±0.3018.95MAX.(3.70)(45°)0.50–0.05+0.102.40 ±0.2010.00 ±0.20FDP20N50 / FDPF20N50 Rev. B

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FDP20N50 / FDPF20N50 500V N-Channel MOSFETMechanical Dimensions TO-220F3.30 ±0.1010.16 ±0.20(7.00)ø3.18 ±0.102.54 ±0.20(0.70)6.68 ±0.2015.80 ±0.20(1.00x45°)MAX1.479.75 ±0.300.80 ±0.100°(3)0.35 ±0.102.54TYP[2.54 ±0.20]#10.50–0.052.54TYP[2.54 ±0.20]4.70 ±0.20+0.102.76 ±0.209.40 ±0.20FDP20N50 / FDPF20N50 Rev. B

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FDP20N50 / FDPF20N50 500V N-Channel MOSFETTRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.ACEx™

ActiveArray™Bottomless™Build it Now™CoolFET™

CROSSVOLT™DOME™

EcoSPARK™E2CMOS™EnSigna™FACT®FAST®FASTr™FPS™FRFET™

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Across the board. Around the world.™The Power Franchise®

Programmable Active Droop™

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SILENT SWITCHER®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™

TinyBoost™TinyBuck™TinyPWM™TinyPower™TinyLogic®TINYOPTO™TruTranslation™UHC®

UniFET™VCX™Wire™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TOIMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USEOF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THERIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or (b)support or sustain life, or (c) whose failure to perform whenproperly used in accordance with instructions for use provided inthe labeling, can be reasonably expected to result in significantinjury to the user.

PRODUCT STATUS DEFINITIONSDefinition of Terms

2. A critical component is any component of a life support deviceor system whose failure to perform can be reasonably expectedto cause the failure of the life support device or system, or toaffect its safety or effectiveness.

Datasheet IdentificationAdvance Information

Product StatusFormative or In Design

Definition

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Rev. I22

PreliminaryFirst Production

No Identification NeededFull Production

ObsoleteNot In Production

10

FDP20N50 / FDPF20N50 Rev. B

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