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专利名称：Memory storage device with heating
element
发明人：David W. Abraham,Philip L. Trouilloud申请号：US10128838申请日：20020423
公开号：US20030198113A1公开日：20031023
专利附图：
摘要：A memory storage device is provided that includes a storage cell having achangeable magnetic region. The changeable magnetic region includes a material havinga magnetization state that is responsive to a change in temperature. The memory
storage device also includes a heating element. The heating element is proximate to thestorage cell for selectively changing the temperature of the changeable magnetic regionof said storage cell. By heating the storage cell via the heating element, as opposed toheating the storage cell by directly applying current thereto, more flexibility is providedin the manufacture of the storage cells.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
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