TCUT1200_07资料

TCUT1200

Vishay Semiconductors

Subminiature Dual-Channel Transmissive Optical Sensor with Phototransistor Outputs, RoHS Compliant, Released for Lead (Pb)-free Solder Process

Description

The TCUT1200 is a compact transmissive sensor thatincludes an infrared emitter and two phototransistordetectors, located face-to-face in a surface-mountpackage.

ACathCathCollEE19151Features

•Package type: Surface-mount •Detector type: Phototransistor •Dimensions:

L 5 mm x W 4 mm x H 4 mm •Gap: 2 mm

•Aperture: 0.3 mm • • • • •

e4Channel distance (center to center): 0.8 mmTypical output current under test: IC = 0.5 mAEmitter wavelength: 950 nm

Lead (Pb)-free soldering released

Lead (Pb)-free component in accordance withRoHS 2002/95/EC and WEEE 2002/96/EC

•Minimum order quantity: 2000 pcs, 2000 pcs/reel

Applications

•Accurate position sensor for encoder •Detection of motion direction •Computer mouse and trackballs

Absolute Maximum Ratings

Tamb = 25°C, unless otherwise specifiedCoupler

Parameter

Power dissipation

Ambient temperature rangeStorage temperature rangeSoldering temperature

in accordance with fig. 13

Test condition

Tamb ≤ 25 °C

SymbolPTambTstgTsd

Value150- 40 to + 85- 40 to + 100

260

UnitmW°C°C°C

Input (Emitter)

Parameter

Reverse voltageForward currentForward surge currentPower dissipation

tp ≤ 10 µsTamb ≤ 25 °C

Test condition

SymbolVRIFIFSMPV

Value52510075

UnitVmAmAmW

Output (Detector)

Parameter

Collector emitter voltageEmitter collector voltageCollector currentPower dissipationDocument Number 83755Rev. 2.2, 13-Mar-07

Tamb ≤ 25 °C

Test condition

SymbolVCEOVECOICPV

Value7072075

UnitVVmAmW

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TCUT1200

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200P - Power Dissipation (mW) Sensor15010050Emitter/Detector0016538

100752550Tamb - Ambient Temperature (°C)Figure1. Power Dissipation Limit vs. Ambient Temperature

Electrical Characteristics

Tamb = 25°C, unless otherwise specifiedCoupler

Parameter

Collector current per channelCollector emitter saturation

voltage

Test condition

VCE = 5 V, IF = 15 mAIF = 15 mA, IC = 0.05 mA

SymbolICVCEsat

Min300

Typ.500

0.4Max

UnitµAV

Input (Emitter)

Parameter

Forward voltageReverse currentJunction capacitance

VR = 5 V

VR = 0 V, f = 1 MHz

Test condition

IF = 15 mA

SymbolVFIRCj

50

Min

Typ.1.2

Max1.510

UnitVµApF

Output (Detector)

Parameter

Collector emitter voltageEmitter collector voltageCollector dark current

Test condition

IC = 1 mAIE = 100 µA

VCE = 25 V, IF = 0, E = 0

SymbolVCEOVECOICEO

Min707

10

100

Typ.

Max

UnitVVnA

Switching Characteristics

Parameter

Rise timeFall time

Test condition

IC = 0.3 mA, VCE = 5 V,RL = 1000 Ω (see figure 3)IC = 0.3 mA, VCE = 5 V,RL = 1000 Ω (see figure 3)

Symboltrtf

Min

Typ.20.030.0

Max150150

Unitµsµs

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Document Number 83755

Rev. 2.2, 13-Mar-07

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TCUT1200

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IF

0 I F I F + 5 VI C adjusted by I F

0IC100 % 90 %tptR G = 50 Ωt p = 20T t p = 1 msChannel I Channel II 50 Ω 16536 OscilloscopeRL

CL

1 M 20 pF

10 %0

trtdtonpulse durationdelay timerise timeturn-on time

tstftofftstorage timefall timeturn-off time

1000 Ω tptdtr

ton(= t + t )rd

96 11698

ts

tf

toff(=ts+tf)

Figure2. Test Circuit for tr and tf

Figure3. Switching Times

Typical Characteristics

Tamb = 25°C, unless otherwise specified

1000 10 VCE = 5 VI Forward Current (mA) F - 100 I C - Collector Current (mA) 1 10 0.1 1 0.01 0.1 0 0.2 0.40.60.8 2.0 1.0 1.21.4 1.6 1.8 13660

0.001 0.1 13665 V F - Forward Voltage (V) 10 1 I F - Forward Current (mA) 100Figure4. Forward Current vs. Forward VoltageFigure6. Collector Current vs. Forward Current

VC Coll. Emitter Saturation Voltage (V) Esat - 0.180.160.140.120.100.080.060.040.02I F = 15 mAI C = 50 µA1.3 I F = 15 mAVF - Forward Voltage (V) 1.2 1.1 1.0 0.9 0.8 - 40 - 20

13661

0 - 40 - 20

0204060801000 20 406080100

13662

T amb - Ambient Temperature (°C) T amb - Ambient Temperature (°C)

Figure5. Collector Emitter Saturation Voltage vs. Ambient Temperature

Figure7. Forward Voltage vs. Ambient Temperature

Document Number 83755Rev. 2.2, 13-Mar-07

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TCUT1200

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1.00.9I C - Collector Current (mA) 0.80.70.60.50.40.30.20.10 - 40 - 20

13663

100 VC E= 5 VIF= 15 mAt r / t f - Rise/Fall Time (µs) 90 80 70 60 50 40 30 20 10 t rt fI F= 5 mA 020 40 60 80 100

16552

0 0 250500 750 10001250 1500 1750 2000 I C - Collector Current (µA) T amb - Ambient Temperature (°C)

Figure8. Collector Current vs. Ambient TemperatureFigure11. Rise/Fall Time vs. Collector Current

10000IC Collector Dark Current (nA) EO - V CE= 10 V I F= 0 1000 I = 15 mA F + VC = 5 V 100 74HCT14 10 10 kΩ 1 0

96 11875

VE U Q 13887 102030 405060708090100 T amb- Ambient Temperature (°C)

GNDFigure9. Collector Dark Current vs. Ambient TemperatureFigure12. Application example

1.25 I C r l - Relative Collector Currente1 0.75 0.5 0.25 0 - 1.5

13657

s - 1- 0.50 0.51 1.5

s - Displacement (mm)

Figure10. Relative Collector Current vs. Displacement

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Document Number 83755

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TCUT1200

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Reflow Solder Profiles

Drypack

Devices are packed in moisture barrier bags (MBB) toprevent the products from absorbing moisture duringtransportation and storage. Each bag contains a des-iccant.

280260240

19152260 °C230 °C4 °C/s MAX4 °C/s MAX180 °C150 °CPre-heating time:90 ± 30 sHeating time:30 ± 10 sTemperature (°C)22020018016014012010080

Floor Life

Floor life (time between soldering and removing fromMBB) must not exceed the time indicated inJ-STD-020. According JEDEC, J-STD-020, this com-ponent is released to Moisture Sensitivity Level 2, foruse of Lead Tin (SnPb) Reflow Solder Profile(Figure 14) or Level 3, for use of Lead (Pb)-free (Sn)Reflow Solder Profile (Figure 13).

Floor Life: 12 month (Level 2) or 168 hours (Level 3) Floor Conditions: Tamb < 30°C, RH < 60 %

Time (s)

Figure13. Lead (Pb)-free (Sn) Reflow Solder Profile

Drying

280 260 240 19153240 °CTemperature (°C)220 200 180 160 140 120 100 80 230 °CIn case of moisture absorption, devices should bebaked before soldering. Conditions see J-STD-020 orLabel. Devices taped on reel dry using recommendedconditions 192 h at 40°C (± 5°C), RH < 5 % or 96 hat 60°C (± 5°C), RH < 5 %.

4 °C/s MAX4 °C/s MAX180 °C150 °C Pre-heating time:90 ± 30 sHeating time:10 - 20 sTime (s)

Figure14. Lead Tin (SnPb) Reflow Solder Profile

Document Number 83755Rev. 2.2, 13-Mar-07

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Dimensions of Reel and Tape in millimeters

13722Dimensions of Tape in millimeters

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Document Number 83755

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Package Dimensions

19311Document Number 83755Rev. 2.2, 13-Mar-07

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TCUT1200

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well astheir impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which areknown as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSsand forbid their use within the next ten years. Various national and international initiatives are pressing for anearlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the useof ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated

with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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Document Number 83755

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Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000Revision: 18-Jul-08

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