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专利名称：Method of manufacturing substrate发明人：Yuichi Taguchi,Akinori Shiraishi,Masahiro
Sunohara,Kei Murayama,HideakiSakaguchi,Mitsutoshi Higashi
申请号：US12247496申请日：20081008公开号：US07795140B2公开日：20100914
专利附图：
摘要：A method of manufacturing a substrate, includes: (a) forming the through holeby etching the silicon substrate from a first surface of the silicon substrate by a Bosch
process; (b) forming a thermal oxide film such that the thermal oxide film covers the firstsurface of the silicon substrate, a second surface of the silicon substrate opposite to thefirst surface, and a surface of the silicon substrate corresponding to a side surface of thethrough hole, by thermally oxidizing the silicon substrate where the through hole isformed; (c) removing the thermal oxide film; (d) forming an insulating film such that theinsulating film covers the first and second surfaces of the silicon substrate and thesurface of the silicon substrate corresponding to the side surface of the through hole;and (e) forming the through electrode in the through hole on which the insulating film isformed.
申请人：Yuichi Taguchi,Akinori Shiraishi,Masahiro Sunohara,Kei Murayama,HideakiSakaguchi,Mitsutoshi Higashi
地址：Nagano JP,Nagano JP,Nagano JP,Nagano JP,Nagano JP,Nagano JP
国籍：JP,JP,JP,JP,JP,JP
代理机构：Rankin, Hill & Clark LLP
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