1MBI1600UC-170资料

SPECIFICATIONDevice Name :Type Name :Spec. No. :IGBT MODULE1MBI1600UC-170MS5F 5928Sep. 30 ’04T.NishimuraSep. 30 ’04T.MiyasakaY.SekiMS5F59281 13H04-004-07b元器件交易网www.cecb2b.com

R e v i s e d R e c o r d sDateClassi-ficationInd.ContentApplieddateIssueddateDrawnCheckedCheckedApprovedSep.-30-’04EnactmentT.MiyasakaY.SekiMS5F59282 13H04-004-06b元器件交易网www.cecb2b.com

1MBI1600UC-170 / PKG.No. M1421. Outline Drawing ( Unit : mm )2. Equivalent circuitMS5F5928313H04-004-03a元器件交易网www.cecb2b.com

3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified )ItemsCollector-Emitter voltageGate-Emitter voltageSymbolsVCESVGESIcCollector currentIcp-Ic-Ic pulseCollector Power DissipationJunction temperatureStorage temperatureIsolationvoltagebetween terminal and copper base *1PcTjTstgVisoMounting Screw Torque *2Main TerminalsSense Terminals (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6) Main Terminals 8~10 Nm (M8) Sense Terminals 1.8~2.1 Nm (M4)AC : 1min. Continuous1msTc=25°CTc=80°CTc=25°CTc=80°CConditionsMaximumRatings1700±202270160045403200160032007810150-40 ~ +12534005.75102.1UnitsVVA1ms1 deviceW°CVACN m4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)ItemsZero gate voltageCollector currentGate-Emitterleakage currentGate-Emitterthreshold voltageCollector-Emittersaturation voltageInput capacitanceTurn-onSymbolsICESIGESVGE(th)VCE(sat)(main terminal)ConditionsVGE = 0VVCE = 1700VVCE = 0VVGE=±20VVCE = 20VIc = 1600mAVGE=15VIc = 1600ATj= 25°CTj=125°CTj= 25°CTj=125°CCharacteristicsmin.typ.max.--5.5-----------------6.52.252.602.052.401601.100.651.500.402.002.201.802.000.450.141.032007.52.55-2.35------2.35-2.15---UnitsmAnAVVCE(sat)(sense terminal)VCiestontrtofftfVF(main terminal)Turn-offVCE=10V,VGE=0V,f=1MHzVcc = 900VIc = 1600AVGE=±15V,Tj=125°CRgon = 0.5 ΩRgoff = 0.9 ΩVGE=0VIF = 1600AIF = 1600ATj= 25°CTj=125°CTj= 25°CTj=125°CnFµsForward on voltageVF(sense terminal)VReverse recovery Lead resistance, terminal-chip *(*)trrR leadµsmΩBiggest internal terminal resistance among arm.MS5F5928413H04-004-03a元器件交易网www.cecb2b.com

5. Thermal resistance characteristicsItemsThermal resistance(1device)Contact Thermal resistance(1device)SymbolsRth(j-c)Rth(c-f)ConditionsIGBTFWDwith Thermal Compound (*)Characteristicsmin.typ.max.-----0.0060.0160.032-Units°C/W * This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module Logo of productionLot.No.Sample.No.1MBI1600UC-170 1600A / 1700VPlace of manufacturing (code)7.Applicable category This specification is applied to IGBT Module named 1MBI1600UC-170 .8.Storage and transportation notes・The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .・Store modules in a place with few temperature changes in order to avoid condensation on the module surface.・Avoid exposure to corrosive gases and dust.・Avoid excessive external force on the module.・Store modules with unprocessed terminals.・Do not drop or otherwise shock the modules when transporting.9. Definitions of switching time ～～90%0VL0VVGEtrrIrr90%～～VCEVccIc90%RGVGEVCEIc0V0Atr(i)trtontoff～～Ic10%10%VCEtf10%10. Packing and LabelingDisplay on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing boxMS5F5928513H04-004-03a元器件交易网www.cecb2b.com

11. Reliability test resultsReliability Test ItemsTestcate-goriesTest items1Terminal Strength(Pull test)2Mounting StrengthPull forceTest timeScrew torqueTest methods and conditions:40N:10±1 sec.:1.8 ~ 2.1 N･m (M4)4.25 ~ 5.75 N･m (M6)8 ~ 10 N･m (M8)Test time:10±1 sec.Range of frequency : 10 ~ 500HzSweeping time:15 min.Acceleration:100m/s2Sweeping direction : Each X,Y,Z axisTest time:6 hr. (2hr./direction)Maximum acceleration:1000m/s2Pulse width:6.0msec.Direction:Each X,Y,Z axisTest time:3 times/directionStorage temp.:125±5 ℃Test duration:1000hr.Storage temp.:-40±5 ℃Test duration:1000hr.Storage temp.:85±2 ℃Relative humidity:85±5% Test duration:1000hr.Test temp.:120±2 ℃Test humidity :85±5%Test duration:96hr.Test temp.: Low temp. -40±5 ℃ High temp. 125 ±5 ℃ RT 5 ~ 35 ℃:High ~ RT ~ Low ~ RT1hr. 0.5hr. 1hr. 0.5hr.:100 cycles +0: High temp. 100 ℃ +5-0-5(Aug.-2001 edition)ReferenceNumberAccept-normsofanceEIAJ ED-4701samplenumber55( 0 : 1 )( 0 : 1 )Mechanical TestsTest Method 401MethodⅠTest Method 402methodⅡ3VibrationTest Method 403Reference 1Condition code B5( 0 : 1 )4ShockTest Method 404Condition code A5( 0 : 1 )1High Temperature Storage2Low Temperature Storage3Temperature Humidity Storage4Unsaturated Pressurized VaporTest Method 201Test Method 202Test Method 103Test code CTest Method 103Test code ETest Method 105555( 0 : 1 )( 0 : 1 )( 0 : 1 )5( 0 : 1 )Environment Tests5Temperature Cycle5( 0 : 1 )Dwell timeNumber of cycles6Thermal ShockTest temp.Test Method 307method ⅠCondition code A5( 0 : 1 ) Low temp. 0 ℃Used liquid : Water with ice and boiling waterDipping time:5 min. par each temp.Transfer time:10 sec.Number of cycles:10 cyclesMS5F5928613H04-004-03a元器件交易网www.cecb2b.com

Reliability Test ItemsTestcate-goriesTest items1High temperature Reverse BiasTest methods and conditionsReferenceNumberAccept-normsofanceEIAJ ED-4701samplenumber5( 0 : 1 )(Aug.-2001 edition)Test Method 101Test temp.Bias VoltageBias MethodEndurancEen Tduersatsnce TestsTest duration2High temperature Bias (for gate)Test temp.Bias VoltageBias MethodTest duration3TemperatureHumidity BiasTest temp.Relative humidityBias VoltageBias MethodTest durationON timeOFF timeTest temp.Number of cycles:Ta = 125±5 ℃ (Tj ≦ 150 ℃):VC = 0.8×VCES:Applied DC voltage to C-EVGE = 0V:1000hr.Test Method 1015( 0 : 1 ):Ta = 125±5 ℃ (Tj ≦ 150 ℃):VC = VGE = +20V or -20V:Applied DC voltage to G-EVCE = 0V:1000hr.:::::::::85±2 C85±5%VC = 0.8×VCESApplied DC voltage to C-EVGE = 0V1000hr.2 sec.18 sec.∆ Tj=100±5 degTj ≦ 150 ℃, Ta=25±5 ℃15000 cyclesoTest Method 102Condition code C5( 0 : 1 )4Intermitted Operating Life(Power cycle)( for IGBT )Test Method 1065( 0 : 1 )Failure CriteriaItemCharacteristicSymbolFailure criteriaUnitLower limitUpper limit--LSL×0.8---USL×2USL×2USL×1.2USL×1.2USL×1.2USL×1.2mAµAmAVVmVmV--NoteElectricalLeakage currentICES characteristic±IGESGate threshold voltageVGE(th)Saturation voltageVCE(sat)Forward voltage VFThermalIGBT∆ VGE resistanceor ∆ VCEFWD∆ VFIsolation voltageVisoVisualVisual inspection inspection Peeling- Plating and the others-USL×1.2Broken insulationThe visual sampleLSL : Lower specified limit.USL : Upper specified limit.Note : Each parameter measurement read-outs shall be made after stabilizing the componentsat room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.And in case of the wetting tests, for example, moisture resistance tests, each componentshall be made wipe or dry completely before the measurement.MS5F5928713H04-004-03a元器件交易网www.cecb2b.com

Reliability Test ResultsTestcate-goriesNumberReferenceNumberofnormsof testfailureEIAJ ED-4701sample(Aug.-2001 edition)sampleTest Method 401MethodⅠTest Method 402methodⅡTest Method 403Condition code BTest Method 404Condition code ATest Method 201Test Method 202Test Method 103Test code CTest Method 103Test code ETest Method 105Test Method 307method ⅠCondition code ATest itemsMechanical Tests1Terminal Strength(Pull test)2Mounting Strength3Vibration4Shock1High Temperature Storage2Low Temperature Storage55555555550000000000Environment Tests3Temperature Humidity Storage4Unsaturated Pressurized Vapor5Temperature Cycle6Thermal Shock1High temperature Reverse BiasTest Method 10155550000Endurance Tests2High temperature Bias( for gate )3Temperature Humidity Bias4Intermitted Operating Life(Power cycling)( for IGBT )Test Method 101Test Method 102Condition code CTest Method 106MS5F5928813H04-004-03a元器件交易网www.cecb2b.com

Collector current vs. Collector-Emitter voltage (typ.)VGE=+15V,sense terminal360032002800Collector current : Ic [A]24002000160012008004000012345Collector-Emitter voltage : VCE [V]Tj=25°CTj=125°CCollector current vs. Collector-Emitter voltage (typ.)Tj= 125°C, sense terminal36003200Collector current : Ic [A]280024002000160012008004000012345Collector-Emitter voltage : VCE [V]9V10VVGE=20V15V12VCollector-Emitter voltage vs. Gate-Emitter voltage (typ.)Tj=125°C,sense terminal10Collector - Emitter voltage : VCE [ V ]8Ic=3200AIc=1600AIc=800A20510152025Gate - Emitter voltage : VGE [ V ]Capacitance vs. Collector-Emitter voltage (typ.)VGE=0V, f= 1MHz, Tj= 25°CCollector-Emitter voltage : VCE [ 250V/div ]Gate - Emitter voltage : VGE [ 5V/div ]1000.0Capacitance : Cies, Coes, Cres [ nF ]Dynamic Gate charge (typ.) Tj= 25°CVCEVGECies100.0Cres10.0Coes1.00102030Collector-Emitter voltage : VCE [V]001000200030004000500060007000Gate charge : Qg [ nC ]MS5F59213H04-004-03a元器件交易网www.cecb2b.com

Switching time vs. Collector current (typ.)Vcc=900V, VGE=±15V, Rgon=0.5Ω, Rgoff=0.9Ω, Tj= １25°C10Switching time : ton, tr, toff, tf [ us ]Switching time : ton, tr, toff, tf [ us ]10.0Switching time vs. Gate resistance (typ.)Vcc=900V, Ic=1600A, VGE=±15V, Tj= 125°Ctoff1tontftr0.1toff1.0tontrtf0.0105001000150020002500Collector current : Ic [ A ]0.10.11.010.0100.0Gate resistance : Rg [ Ω ]Switching loss vs. Collector current (typ.)Vcc=900V, VGE=±15V, Rgon=0.5Ω, Rgoff=0.9Ω,Tj=125°C1000Switching loss : Eon, Eoff, Err [ mJ/pulse ]Switching loss : Eon, Eoff, Err [ mJ/pulse ]Eoff800Eon4000Switching loss vs. Gate resistance (typ.)Vcc=900V, Ic=1600A, VGE=±15V, Tj= 125°CEon3200600Err40024001600EoffErr00.11.010.0100.02008000040080012001600200024002800Collector current : Ic [ A ] , Forward current : IF [ A ]Gate resistance : Rg [ Ω ] Reverse bias safe operating area (max.)±VGE=15V,Tj = 125°C / chip36003200Collector current : Ic [ A ]2800240020001600120080040000500100015002000Collector - Emitter voltage : VCE [ V ]MS5F59281013H04-004-03a元器件交易网www.cecb2b.com

Forward current vs. Forward on voltage (typ.)sense terminal3600Reverse recovery current : Irr [ A ]Reverse recovery time : trr [ us ]3200Forward current : IF [ A ]28002400200016001200800400001234Forward on voltage : VF [ V ]0.010Tj=25°CTj=125°C1000.00100.0010.001.000.1010000.00Reverse recovery characteristics (typ.)Vcc=900V, VGE=±15V, Rg=0.5Ω, Tj=125°CIrrtrr40080012001600200024002800Forward current : IF [ A ]Transient thermal resistance (max.)0.1000Thermal resistanse : Rth(j-c) [ °C/W ]FWDIGBT0.01000.00100.00010.0010.0100.1001.000Pulse width : Pw [ sec ]MS5F59281113H04-004-03a元器件交易网www.cecb2b.com

Warnings-This product shall be used within its absolute maximum rating (voltage, current, and temperature).　This productmay be broken in case of using beyond the ratings.製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する場合があります。-Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipmentfrom causing secondary destruction, such as fire, its spreading, or explosion.万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず付けて火災，爆発，延焼等の２次破壊を防いでください。-Use this product after realizing enough working on environment and considering of product's reliability life.This product may be broken before target life of the system in case of using beyond the product's reliability life.製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。-If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,sulfurous acid gas), the product's performance and appearance can not be ensured easily.酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。-Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability isclassified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and downof case temperature (Tc), and depends on cooling design of equipment which use this product. In applicationwhich has such frequent rise and down of Tc, well consideration of product life time is necessary.本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)。パワーサイクル耐量にはこのΔTjによる場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による熱ストレスであり、本製品をご使用する際の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分留意してご使用下さい。-Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poorcontact problem.主端子及び制御端子に応力を与えて変形させないで下さい。　端子の変形により、接触不良などを引き起こす場合があります。-Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convexof cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, toolarge concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity willbe worse and over heat destruction may occur.冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。　過大な凸反りがあったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、本製品と冷却フィンの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。-In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If thethermal compound amount was not enough or its applying method was not suitable, its spreading will not beenough, then, thermal conductivity will be worse and thermal run away destruction may occur.Confirm spreading state of the thermal compound when its applying to this product.(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。コンパウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)-It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOAspecification. This product may be broken if the locus is out of the RBSOA.ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。-If excessive static electricity is applied to the control terminals, the devices may be broken. Implement somecountermeasures against static electricity.制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。MS5F59281213H04-004-03a元器件交易网www.cecb2b.com

Warnings-Never add the excessive mechanical stress to the main or control terminals when the product is applied toequipments. The module structure may be broken.素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。-In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to preventthis malfunction. (Recommended value : -VGE = -15V)逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に-VGEは十分な値で設定して下さい。　（推奨値 : -VGE = -15V)-In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product inthe most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ条件（+VGE, -VGE, RG等）でご使用下さい。-This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage.VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。VCEは必ず絶対定格の範囲内でご使用下さい。Cautions-Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury ordeath, damage to property like by fire, and other social damage resulted from a failure or malfunction ofthe Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundantdesign, spread-fire-preventive design, and malfunction-protective design.富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保のための手段を講じて下さい。-The application examples described in this specification only explain typical ones that used the Fuji Electric DeviceTechnology products. This specification never ensure to enforce the industrial property and other rights, nor license theenforcement rights.本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。-The product described in this specification is not designed nor made for being applied to the equipment orsystems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,atomic control systems and submarine relaying equipment or systems,　please apply after confirmation of this product to be satisfied about system construction and required reliability.本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に満足することをご確認の上、ご利用下さい。If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.MS5F59281313H04-004-03a