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专利名称：Non-volatile memory and memory of
manufacturing the same
发明人：Takashi Ono申请号：US09597281申请日：20000619公开号：US017044B1公开日：20020709
专利附图：
摘要：In a non-volatile memory, memory cells have respective floating gates formedof a first polysilicon and respective control gates formed of a second polysilicon. Further,in the non-volatile memory, peripheral circuits include transistors having respective gates
formed of the first polysilicon. In addition, a silicide layer is formed directly on thecontrol gates of the memory cells and directly on the gates of the transistors.
申请人：OKI ELECTRIC INDUSTRY CO., LTD.
代理机构：Jones Volentine, PLLC
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