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专利名称：RESISTIVE MEMORY APPARATUS,
OPERATION METHOD THEREOF, ANDSYSTEM HAVING THE SAME
发明人：Se Ho LEE申请号：US14173542申请日：20140205
公开号：US201501035A1公开日：20150416
专利附图：
摘要：A resistive memory apparatus includes a memory cell array including a pluralityof resistive memory cells, an address decoder suitable for decoding an address signal,
and accessing the memory cell array, a read/write control circuit suitable for
programming data in the memory cell array or reading out data from the memory cellarray, a voltage generation unit suitable for generating a program voltage and a firstread voltage for a program operation and a second read voltage for a read operationand providing the voltages to the address decoder, and a controller suitable for
controlling the voltage generation unit to generate the first read voltage for verificationof the program operation in response to a program command, and the second readvoltage higher than the first voltage in response to a read command.
申请人：SK hynix Inc.
地址：Gyeonggi-do KR
国籍：KR
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