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METHOD OF MAKING INTEGRATED CIRCUIT EMBEDDED WITH

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专利名称:METHOD OF MAKING INTEGRATED CIRCUIT

EMBEDDED WITH NON-VOLATILEPROGRAMMABLE MEMORY HAVINGVARIABLE COUPLING

发明人:David Liu,John Nicholas Gross申请号:US14048534申请日:20131008

公开号:US20140065772A1公开日:20140306

专利附图:

摘要:A programmable non-volatile device is made with a floating gate that functions

as a FET gate that overlaps a portion of a source/drain region and allows for variablecoupling through geometry and/or biasing conditions. This allows a programmingvoltage for the device to be imparted to the floating gate through variable capacitivecoupling, thus changing the state of the device. Multi-state embodiments are alsopossible. The invention can be used in environments such as data encryption, referencetrimming, manufacturing ID, security ID, and many other applications.

申请人:INVENSAS CORPORATION

地址:San Jose CA US

国籍:US

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