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专利名称：Method of improving contact resistance发明人：Jerry Broz,Cheryl Hartfield,Elizabeth R.
Kramer,Randy Pak,Hansley Regan
Rampersad,Phillip R. Coffman,Sunny K. Lee
申请号：US10319213申请日：20021213
公开号：US20040115934A1公开日：20040617
专利附图：
摘要：A method for improving the electrical resistance of contacts on an integratedcircuit. The method includes the steps of first exposing the contacts to a solvent, therebyremoving organic contaminants; and then exposing the contacts to ion bombardment,thereby removing inorganic contaminants. The step of exposing the contacts to ionbombardment can remove a portion of the contact. The method may also include a stepof oxidizing the pad to produce an oxide layer of a predetermined thickness. The ionbombardment can be carried out in a parallel plate etch tool or by using the RIE toolused to carry out a previous etch step. Another embodiment of the invention is a methodof improving the resistance of contacts on an integrated circuit including the steps of:exposing the contacts to ion bombardment in the presence of a fluorine and oxygen
plasma, thereby removing inorganic contaminants; and exposing the contacts to asolvent, thereby removing organic contaminants. The step of exposing the contacts to asolvent can remove a portion of the contact. The method can also include the step ofoxidizing the pad to produce an oxide layer of a predetermined thickness. The ionbombardment can be carried out in an inductively coupled plasma etch tool, anRF/microwave plasma etch tool, or a tool combining these capabilities. The solvent inthese embodiments is selected from the group consisting of n-methyl pyrrolidone,isopropyl alcohol, methanol, glycol, or a dimethylacetamide-based formulation, and ispreferably a formulation comprising n-methylethanolamide, dimethylacetamide, 8-hydroxyquinoline, and water.
申请人：BROZ JERRY,HARTFIELD CHERYL,KRAMER ELIZABETH R.,PAKRANDY,RAMPERSAD HANSLEY REGAN,COFFMAN PHILLIP R.,LEE SUNNY K.
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