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FPGA可编程逻辑器件芯片XC7Z100-2FFG900I中文规格书

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 Zynq-7000SoC

(Z-7030, Z-7035, Z-7045, and Z-7100):DC and AC Switching Characteristics

DS191 (v1.18.1) July 2, 2018

Product Specification

Introduction

The Zynq®-7000 SoCs are available in -3, -2, -2LI, -1, and -1LQ speed grades, with -3 having the highest performance. The -2LI devices operate at programmable logic (PL)VCCINT/VCCBRAM=0.95V and are screened for lower maximum static power. The speed specification of a -2LI device is the same as that of a -2device. The -1LQ devices operate at the same voltage and speed as the -1Q devices and are screened for lower power. Zynq-7000 device DC and AC characteristics are specified in commercial,

extended, industrial, and expanded (Q-temp) temperature ranges. Except the operating temperature range or unless otherwise noted, all the DC and AC electrical parameters are the same for a particular speed grade (that is, the timing characteristics of a -1 speed grade industrial device are the same as for a -1 speed grade commercial device). However, only selected speed grades and/or devices are available in the commercial, extended, or industrial temperature ranges.

All supply voltage and junction temperature specifications are representative of worst-case conditions. The

parameters included are common to popular designs and typical applications.

The available device/package combinations are outlined in:•••

Zynq-7000SoC Overview (DS190)

Defense-grade Zynq-7000QSoC Overview (DS196)XAZynq-7000SoC Overview (DS188)

This Zynq-7000 SoC data sheet, which covers the specifications for the XC7Z030, XA7Z030, XQ7Z030, XC7Z035, XC7Z045, XQ7Z045, XC7Z100, and XQ7Z100 complements the Zynq-7000 SoC documentation suite available on the Xilinx website.

DC Characteristics

Table 1:Absolute Maximum Ratings(1)

Symbol

Processing System (PS)VCCPINTVCCPAUXVCCPLLVCCO_DDRVCCO_MIO(2)VPREFVPIN(2)(3)(4)(5)

PS internal logic supply voltagePS auxiliary supply voltagePS PLL supplyPS DDR I/O supplyPS MIO I/O supplyPS input reference voltagePS MIO I/O input voltagePS DDR I/O input voltage

–0.5–0.5–0.5–0.5–0.5–0.5–0.40–0.55

1.12.02.02.03.62.0

VCCO_MIO+0.55VCCO_DDR+0.55

1.11.12.03.62.02.06

VVVVVVVV

DescriptionMinMaxUnits

Programmable Logic (PL)VCCINTVCCBRAMVCCAUXVCCO

VCCAUX_IO(4)

PL internal supply voltage

PL supply voltage for the block RAM memoriesPL auxiliary supply voltage

PL output drivers supply voltage for HR I/O banksPL output drivers supply voltage for HP I/O banksAuxiliary supply voltage

–0.5–0.5–0.5–0.5–0.5–0.5

VVVVVV

DS191 (v1.18.1) July 2, 2018Product Specification

Zynq-7000 SoC (Z-7030, Z-7035, Z-7045, and Z-7100): DC and AC Switching Characteristics

DS191 (v1.18.1) July 2, 2018Product Specification

Zynq-7000 SoC (Z-7030, Z-7035, Z-7045, and Z-7100): DC and AC Switching Characteristics

Table 4:VIN Maximum Allowed AC Voltage Overshoot and Undershoot for PS I/O and PL HR I/O Banks(1)(2)

AC Voltage Overshoot

% of UI @–40°C to 125°C

AC Voltage Undershoot

–0.40

VCCO+0.55

100

–0.45–0.50–0.55

VCCO+0.60VCCO+0.65VCCO+0.70VCCO+0.75VCCO+0.80VCCO+0.85VCCO+0.90VCCO+0.95

46.621.29.754.552.151.020.490.24

–0.60–0.65–0.70–0.75–0.80–0.85–0.90–0.95

% of UI @–40°C to 125°C

10061.725.811.04.772.100.940.430.200.090.040.02

DS191 (v1.18.1) July 2, 2018Product Specification

Zynq-7000 SoC (Z-7030, Z-7035, Z-7045, and Z-7100): DC and AC Switching Characteristics

SymbolVCCOVOHVOLVODIFFVOCMVIDIFFVICM

DC Parameter

Supply Voltage

Output High Voltage for Q and QOutput Low Voltage for Q and QDifferential Output Voltage(Q–Q), Q = High (Q–Q), Q=High

Output Common-Mode VoltageDifferential Input Voltage(Q–Q), Q = High (Q–Q), Q=High

Input Common-Mode Voltage

Conditions

RT = 100Ω across Q and Q signalsRT = 100Ω across Q and Q signalsRT = 100Ω across Q and Q signalsMin2.375–0.7002471.0001000.300

Typ2.500––3501.2503501.200

Max2.6251.675–6001.4256001.500

UnitsVVVmVVmVV

RT = 100Ω across Q and Q signalsDS191 (v1.18.1) July 2, 2018Product Specification

Zynq-7000 SoC (Z-7030, Z-7035, Z-7045, and Z-7100): DC and AC Switching Characteristics

Table 30:DDR3L Interface Switching Characteristics (800Mb/s)(1) (Cont’d)

SymbolTCKCA(6)Notes:

1.2.3.4.5.6.

Recommended VCCO_DDR=1.35V±5%.Measurement is taken from VREF to VREF.

Measurement is taken from either the rising edge of DQ that crosses VIH(AC) or the falling edge of DQ that crosses VIL(AC) to VREF of DQS.Measurement is taken from either the rising edge of DQ that crosses VIL(DC) or the falling edge of DQ that crosses VIH(DC) to VREF of DQS.Measurement is taken from either the rising edge of CMD/ADDR that crosses VIH(AC) or the falling edge of CMD/ADDR that crossesVIL(AC) to VREF of CLK.

Measurement is taken from either the rising edge of CMD/ADDR that crosses VIL(DC) or the falling edge of CMD/ADDR that crossesVIH(DC) to VREF of CLK.

Description

Command/address output hold time with respect to CLK

Min853

Max–

Unitsps

Table 31:LPDDR2 Interface Switching Characteristics (800Mb/s)(1)

SymbolTDQVALID(2)TDQDS(3)TDQDH(4)TDQSSTCACK(5)TCKCA(6)Notes:

1.2.3.4.5.6.

Description

Input data valid windowOutput DQ to DQS skewOutput DQS to DQ skewOutput clock to DQS skew

Command/address output setup time with respect to CLKCommand/address output hold time with respect to CLK

Min5001113180.91132363

Max–––1.10––

UnitspspspsTCKpsps

Recommended VCCO_DDR=1.2V±5%.Measurement is taken from VREF to VREF.

Measurement is taken from either the rising edge of DQ that crosses VIH(AC) or the falling edge of DQ that crosses VIL(AC) to VREF of DQS.Measurement is taken from either the rising edge of DQ that crosses VIL(DC) or the falling edge of DQ that crosses VIH(DC) to VREF of DQS.Measurement is taken from either the rising edge of CMD/ADDR that crosses VIH(AC) or the falling edge of CMD/ADDR that crosses VIL(AC)to VREF of CLK.

Measurement is taken from either the rising edge of CMD/ADDR that crosses VIL(DC) or the falling edge of CMD/ADDR that crossesVIH(DC) to VREF of CLK.

Table 32:LPDDR2 Interface Switching Characteristics (400Mb/s)(1)

SymbolTDQVALID(2)TDQDS(3)TDQDH(4)TDQSSTCACK(5)TCKCA(6)Notes:

1.2.3.4.5.6.

Recommended VCCO_DDR=1.2V±5%.Measurement is taken from VREF to VREF.

Measurement is taken from either the rising edge of DQ that crosses VIH(AC) or the falling edge of DQ that crosses VIL(AC) to VREF of DQS.Measurement is taken from either the rising edge of DQ that crosses VIL(DC) or the falling edge of DQ that crosses VIH(DC) to VREF of DQS.Measurement is taken from either the rising edge of CMD/ADDR that crosses VIH(AC) or the falling edge of CMD/ADDR that crosses VIL(AC)to VREF of CLK.

Measurement is taken from either the rising edge of CMD/ADDR that crosses VIL(DC) or the falling edge of CMD/ADDR that crossesVIH(DC) to VREF of CLK.

Description

Input data valid windowOutput DQ to DQS skewOutput DQS to DQ skewOutput clock to DQS skew

Command/address output setup time with respect to CLKCommand/address output hold time with respect to CLK

Min5005618520.91617918

Max–––1.08––

UnitspspspsTCKpsps

DS191 (v1.18.1) July 2, 2018Product Specification

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