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专利名称：Method of detaching a thin film by melting
precipitates
发明人：Aurélie Tauzin,Bruce Faure,Arnaud Garnier申请号：US12293193申请日：20070328公开号：US07670930B2公开日：20100302
专利附图：
摘要：A method of fabricating a thin film from a substrate includes implantation intothe substrate, for example made of silicon, of ions of a non-gaseous species, for examplegallium, the implantation conditions and this species being chosen, according to thematerial of the substrate, so as to allow the formation of precipitates confined in acertain depth, distributed within a layer, these precipitates being made of a solid phasehaving a melting point below that of the substrate. The method optionally furtherincluding intimate contacting of this face of the substrate with a stiffener, anddetachment of a thin film by fracturing the substrate at the layer of precipitates byapplying a mechanical and/or chemical detachment stress under conditions in which theprecipitates are in the liquid phase.
申请人：Aurélie Tauzin,Bruce Faure,Arnaud Garnier
地址：Saint Egreve FR,Grenoble FR,Grenoble FR
国籍：FR,FR,FR
代理机构：Brinks Hofer Gilson & Lione
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