DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1824N-CHANNEL MOS FETFOR SWITCHINGThe 2SK1824 is a N-channel vertical type MOS FET that isdriven at 2.5 V.Because this MOS FET can be driven on a low voltage andbecause it is not necessary to consider the drive current, the2SK1824 is ideal for driving the actuator of power-saving systems,1.6 ± 0.1PACKAGE DIMENSIONS (in mm)0.3 ± 0.050.1+0.1–0.050.8 ± 0.1such as VCR cameras and headphone stereo systems.Moreover, the 2SK1824 is housed in a super small mini-moldpackage so that it can help increase the mounting density on theprinted circuit board and lower the mounting cost, contributing tominiaturization of the application systems.D0 to 0.1G0.2+0.1–00.50.50.60.75 ± 0.05SFEATURES•Small mounting area: about 60 % of the conventional mini-moldpackage (SC-70)•Can be automatically mounted•Can be directly driven by 3-V ICThe internal diode in the right figure is a parasitic diode.The protection diode is to protect the product from damagedue to static electricity. If there is a danger that an extremelyhigh voltage will be applied across the gate and source in theactual circuit, a gate protection circuit such as an externalconstant-voltage diode is necessary.Gate (G)Gate protectiondiode1.01.6 ± 0.1EQUIVALENT CIRCUITDrain (D)InternaldiodePIN CONNECTIONSS: SourceD: DrainG: GateMarking: B1Source (S)ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)PARAMETERDrain to Source VoltageGate to Source VoltageDrain Current (DC)Drain Current (Pulse)Total Power DissipationChannel TemperatureOperating TemperatureStorage TemperatureSYMBOLVDSSVGSSID(DC)ID(pulse)PTTchToptTstgPW ≤ 10 msDuty cycle ≤ 50 %3.0 cm2 × 0. mm, ceramic substrate usedVGS = 0VDS = 0TEST CONDITIONSRATING30±7±100±200200150–55 to +80–55 to +150UNITVVmAmAmW˚C˚C˚CDocument No. D11220EJ1V0DS00 (1st edition)Date Published June 1996 PPrinted in Japan
19962SK1824ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)PARAMETERDrain Cut-Off CurrentGate Leakage CurrentGate Cut-Off VoltageForward Transfer AdmittanceDrain to Source On-State ResistanceDrain to Source On-State ResistanceInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceTurn-On Delay TimeRise TimeTurn-Off Delay TimeFall TimeSYMBOLIDSSIGSSVGS(off)|yfs|RDS(on)1RDS(on)2CissCossCrsstd(on)trtd(off)tfVDD = 5V, ID = 10 mAVGS(on) = 5 V, RG = 10 ΩRL = 500 ΩTEST CONDITIONSVDS = 30 V, VGS = 0VGS = ±5 V, VDS = 0VDS = 3 V, ID = 10 µAVDS = 3 V, ID = 10 mAVGS = 2.5 V, ID = 1 mAVGS = 4.0 V, ID = 10 mAVDS = 5.0 V, VGS = 0, f = 1 MHz0.820±0.11.05075161421520100100138MIN.TYP.MAX.1.0±31.5UNITµAµAVmSΩΩpFpFpFnsnsnsnsSWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load)
RL
DUT VDD
Gate Voltage WaveformVGS010 %VGS(on)90 %RGPG.IDDrain Current Waveform10 %90 %90 %ID10 %0Vin0ττ = 1 sµDuty cycle ≤ 1 %td(on)tontrtd(off)tofftf2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREA
%100 - rotc80aF gnita60reD - T40d20
020406080100120140160TC - Case Temperature - ˚CTRANSFER CHARACTERISTICS
300VDS = 3 V100PulsedAm -10
tnerruC 1.0
150 ˚CTA = –25 ˚CniarD - D0.1
2.5 ˚CI7.5 ˚C0.01
0.001
0.51.01.52.02.53.03.5VGS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCEvs. GATE TO SOURCE VOLTAGE
Ω 13- ePulsedcnatsis11eR etatS9-nO ecID = 0.1 Aruo7S ot niarD5 ID = 10 mA- )no(SDR3012345678VGS - Gate to Source Voltage - V
2SK1824
TOTAL POWER DISSIPATION vs.AMBIENT TEMPERATURE
240
3.0 cm2 × 0. mm
Using ceramic substrate
W200m - no160itapissiD120 rewoP80 - TP40
0306090120150180
TA - Ambient Temperature - ˚CFORWARD TRANSFER ADMITTANCEvs. DRAIN CURRENT
600
VDS = 3 VPulsed200TA = 25 ˚C–25 ˚C1005075 ˚C150 ˚C2010sf520.51.03.01030100200ID - Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCEvs. DRAIN CURRENT
Ω - VGS = 2.5 Vec24nPulsedatsise20R etatS16-nO ec12rTA = 150 ˚CuoS o875 ˚Ct nia–25 ˚C25 ˚CrD -4 )no(SDR00.513103060ID - Drain Current - mA
3
|y| - Forward Transfer Admittance - mSDRAIN TO SOURCE ON-STATE RESISTANCEvs. DRAIN CURRENTΩ - ec30VGS = 4 VnPulsedatsiseR etatS20-nO ecruoS ot 10niaTA = 150 ˚CrD75 ˚C -25 ˚C )no(S–25 ˚CDR00.5131030100200ID - Drain Current - mA SWITCHING CHARACTERISTICS300VDD = 5 VVGS = 5 Vsmtd(off)
Rin = 10 Ω - em100tf
iT gntr
ihctiwS - f30t ,)ffo(dt ,rtd(on)
t ,)no(dt1001030100300ID - Drain Current - mA4
2SK1824CAPACITANCE vs.DRAIN TO SOURCE VOLTAGE50f = 1 MHz30VDS = 5 VFp - ecCissnati10CosscapaC - ssrC3 ,ssoC Crss,ssiC10.50.5131030VDS - Drain to Source Voltage - VSOURCE TO DRAIN DIODEFORWARD VOLTAGE200VGS = 0100Pulsedtn30erruC d10rawroF 3edoiD -1 DSI0.30.10.30.40.50.60.70.80.91.01.1VSD - Source to Drain Voltage - V2SK1824
REFERENCE
Document Name
NEC semiconductor device reliability/quality control systemQuality grade on NEC semiconductor devicesSemiconductor device mounting technology manualGuide to quality assurance for semiconductor devicesSemiconductor selection guide
Document No.TEI-1202IEI-1209C10535EMEI-1202X10679E
5
2SK1824[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior writtenconsent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in thisdocument.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectualproperty rights of third parties by or arising from use of a device described herein or any other liability arisingfrom use of such device. No license, either express, implied or otherwise, is granted under any patents,copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons orproperty arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safetymeasures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based ona customer designated “quality assurance program“ for a specific application. The recommended applicationsof a device depend on its quality grade, as indicated below. Customers must check the quality grade of eachdevice before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade,they should contact NEC Sales Representative in advance.Anti-radioactive design is not implemented in this product.
M4 94.11
