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专利名称：Integrated Circuit with Separate Supply
Voltage for Memory That is Different fromLogic Circuit Supply Voltage
发明人：Brian J. Campbell,Vincent R. von
Kaenel,Daniel C. Murray,Gregory S.Scott,Sribalan Santhanam
申请号：US13617344申请日：20120914
公开号：US20130016575A1公开日：20130117
专利附图：
摘要：In one embodiment, an integrated circuit includes at least one logic circuitsupplied by a first supply voltage and at least one memory circuit coupled to the logiccircuit and supplied by a second supply voltage. The memory circuit is configured to beread and written responsive to the logic circuit even if the first supply voltage is less thanthe second supply voltage during use. In another embodiment, a method includes a logiccircuit reading a memory cell, the logic circuit supplied by a first supply voltage; and thememory cell responding to the read using signals that are referenced to the first supplyvoltage, wherein the memory cell is supplied with a second supply voltage that is greaterthan the first supply voltage during use.
申请人：Brian J. Campbell,Vincent R. von Kaenel,Daniel C. Murray,Gregory S.Scott,Sribalan Santhanam
地址：Sunnyvale CA US,Palo Alto CA US,Morgan Hill CA US,Santa Clara CA US,Palo AltoCA US
国籍：US,US,US,US,US
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