Methods of forming capacitors, and methods of form

专利名称：Methods of forming capacitors, and

methods of forming capacitor-over-bit linememory circuitry, and related integratedcircuitry constructions

发明人：Tyler A. Lowrey,Luan C. Tran,Alan R.

Reinberg,D. Mark Durcan

申请号：US09730865申请日：20001205

公开号：US200100014A1公开日：20010524

摘要：Methods of forming capacitors, methods of forming capacitor-over-bit linememory circuitry, and related integrated circuitry constructions are described. In oneembodiment, a capacitor storage node is formed having an uppermost surface and anoverlying insulative material over the uppermost surface. Subsequently, a capacitordielectric functioning region is formed discrete from the overlying insulative materialoperably proximate at least a portion of the capacitor storage node. A cell electrodelayer is formed over the capacitor dielectric functioning region and the overlying

insulative material. In another embodiment, a capacitor storage node is formed having anuppermost surface and a side surface joined therewith. A protective cap is formed overthe uppermost surface and a capacitor dielectric layer is formed over the side surfaceand protective cap. A cell electrode layer is formed over the side surface of the capacitorstorage node. In yet another embodiment, a plurality of capacitor storage nodes areformed arranged in columns. A common cell electrode layer is formed over the plurality

of capacitor storage nodes. Cell electrode layer material is removed from between thecolumns and isolates individual cell electrodes over individual respective capacitorstorage nodes. After the removing of the cell electrode layer material, conductivematerial is formed over portions of remaining cell electrode material thereby placingsome of the individual cell electrodes into electrical communication with one another.

申请人：LOWREY TYLER A.,TRAN LUAN C.,REINBERG ALAN R.,DURCAN D. MARK

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