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专利名称：Boosting circuit
发明人：Takahashi, Hitoshi,Yamaguchi,
Satoru,Nunokawa, Hideo
申请号：EP83301820.3申请日：19830330公开号：EP0090662B1公开日：19870805
摘要：A boosting circuit comprising: a plurality of variable capacitors with capacitancevalues controllable in accordance with the voltage level at their first and -secondterminals; a plurality of first buffer circuits located at the first terminal side, each actingto increase the voltage level at the corresponding first terminal to a first level; and asingle second buffer circuit located at the second terminal side cooperating commonlywith these variable capacitors, acting to increase the voltage level at each second
terminal. The first level is thus boosted to a second level which results in an output of thecircuit concerned. Each variable capacitor is fabricated by a MOS transistor capacitor.
申请人：FUJITSU LIMITED
地址：1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
国籍：JP
代理机构：Fane, Christopher Robin King
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