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专利名称：Bootstrapped current and voltage reference
circuits utilizing an N-type negativeresistance device
发明人：Randall J. Pflueger申请号：US08/095903申请日：19930722公开号：US05422563A公开日：19950606
摘要：A bootstrap current reference circuit having an n-type negative resistancenetwork, and a biasing device responsive to operating current of the n-type negativeresistance network for biasing the network to operate as a current source at an
operating point substantially in a region of a predetermined current peak associated withthe n-type negative resistance network. In one embodiment the circuit includes adepletion-mode FET (DFET) and a stable trimmed n-type negative resistance device (ST-NNRD) connected in series with the source of the DFET. The gate of the DFET is feedbackcoupled to the output of the ST-NNRD so as to bias it in a region of operation in which itexhibits a large incremental resistance, thus bootstrapping the circuit to operate in astate substantially independent of fluctuations associated with supply voltage source. Inan alternate embodiment, the circuit includes a ST- NNRD connected in series with thesource terminal of a DFET. The DFET is one side of a current mirror with a second DFET,the current mirror being terminated by an impedance providing level matching andmonostable loading of the ST-RTD.
申请人：MASSACHUSETTS INSTITUTE OF TECHNOLOGY
代理机构：Samuels, Gauthier & Stevens
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