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专利名称：Method of fabricating thin film transistor of
thin film transistor liquid crystal display andmethod of fabricating liquid crystal display
发明人：Hao-Chieh Lee,Chi-Hsun Hsu申请号：US11357812申请日：20060216公开号：US07528019B2公开日：20090505
专利附图：
摘要：A method of fabricating a thin film transistor of a thin film transistor liquidcrystal display is provided. First, a patterned dielectric layer is formed over a substrate. Ametallic layer is formed over the substrate to cover the patterned dielectric layer.Thereafter, the metallic layer is planarized until the patterned dielectric layer is exposed.The remained metallic layer serves as a gate. An insulating layer is formed over thepatterned dielectric layer and the gate, and then a semiconductor layer is formed overthe gate insulating layer above the gate. A source and a drain are formed over the
semiconductor layer.
申请人：Hao-Chieh Lee,Chi-Hsun Hsu
地址：Taoyuan TW,Taoyuan TW
国籍：TW,TW
代理机构：J.C. Patents
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