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专利名称：Method and apparatus for improving the
uniformness of patterns generated byelectron beam lithography
发明人：Bretscher, Erwin,Vettiger, Peter申请号：EP81110007.2申请日：19811130公开号：EP0080526A1公开日：19830608
专利附图：
摘要：To improve the uniformness of patterns for LSI circuits or masks generated inan electron beam lithographic system, a backscatter indicator signal (BS indicator) is
obtained and used to vary a control signal (SRF) for the beam stepping rate proportionalto the variations in the amount of backscattered electrons. This avoids non-uniformitysuch as line width variations which otherwise occur when the pattern to be generatedcovers border lines between two different substrate or base layer materials. Specialrange setting circuitry (47) is provided for adjusting, during an initial prescan of a sampleof two materials having an extreme difference in their backscatter characteristic, theoffset and the gain for the backscatter detector (41). During subsequent exposure of awafer, the backscatter indicator signal and thus the stepping rate control signal variationsremain within preselected limits.
申请人：International Business Machines Corporation
地址：Old Orchard Road Armonk, N.Y. 10504 US
国籍：US
代理机构：Möhlen, Wolfgang C., Dipl.-Ing.
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