专利内容由知识产权出版社提供
专利名称：Semiconductor device with channel having
plural impurity regions
发明人：Shunpei Yamazaki申请号：US09875407申请日：20010604公开号：US06690075B2公开日：20040210
专利附图：
摘要：In a CMOS circuit, impurity regions are formed in the channel forming region ofeach of an n-channel and p-channel transistors alone the channel direction. The intervalsbetween the impurity regions in the n-channel transistor is set narrower than those
between the impurity regions in the p-channel transistor so as to make the absolutevalues of the threshold voltages of the n-channel and p-channel transistors
approximately equal to each other. Where active layers are formed by utilizing a crystalstructural body that is a collection of needle-like or columnar crystals, the same effectcan be attained by controlling the width of the needle-like or columnar crystals.
申请人：SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
代理机构：Fish & Richardson P.C.
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