专利内容由知识产权出版社提供
专利名称：INTEGRATED CIRCUITS AND METHODS FOR
FABRICATING INTEGRATED CIRCUITS WITHIMPROVED CONTACT STRUCTURES
发明人：Xunyuan Zhang,Xuan Lin,Vimal Kamineni申请号：US13887174申请日：20130503
公开号：US20140327140A1公开日：20141106
专利附图：
摘要：Integrated circuits and methods for fabricating integrated circuits are provided.In an exemplary embodiment, a method for fabricating integrated circuits includes
providing a semiconductor substrate disposed with a device therein and/or thereon. Acontact structure including a barrier layer and a plug metal overlying the barrier layer isformed in electrical contact with the device. A hardmask is formed overlying the contactstructure. The method includes performing an etch to form a via opening through thehardmask and to expose the barrier layer and the plug metal. Further, the methodremoves a remaining portion of the hardmask with a wet etchant, while the contactstructure is configured to inhibit the wet etchant from etching the barrier layer. In themethod, the via opening is filled with a conductive material to form an interconnect to thecontact structure.
申请人：GLOBALFOUNDRIES, INC.
地址：Grand Cayman KY
国籍：KY
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