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专利名称：Contact Structure of Semiconductor Device发明人：Clement Hsingjen Wann,Ling-Yen Yeh,Chi-Wen Liu,Chi-Yuan Shih,Li-Chi Yu,Meng-ChunChang,Ting-Chu Ko,Chung-Hsien Chen
申请号：US14701240申请日：20150430
公开号：US20150236016A1公开日：20150820
专利附图：
摘要：A method of fabricating a semiconductor device comprises forming a finstructure extending from a substrate, the fin structure comprising a first fin, a second fin,
and a third fin between the first fin and the second fin. The method further comprisesforming germanide over a first facet of the first fin, a second facet of the second fin, and asubstantially planar surface of the third fin, wherein the first facet forms a first acuteangle with a major surface of the substrate and is substantially mirror symmetric with thesecond facet, and wherein the substantially planar surface of the third fin forms a secondacute angle smaller than the first acute angle with the major surface of the substrate.
申请人：Taiwan Semiconductor Manufacturing Company, Ltd.
地址：Hsin-Chu TW
国籍：TW
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