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专利名称：Method for forming a gate electrode having
a metal
发明人：Olubunmi O. Adetutu,Lynne M.
Michaelson,Kathleen C. Yu,Robert E. Jones
申请号：US10827202申请日：20040419
公开号：US20050233562A1公开日：20051020
专利附图：
摘要：One embodiment forms a gate dielectric layer over a substrate and thenselectively deposits a first metal layer over portions of the gate dielectric layer in which a
first device type will be formed. A second metal layer, different from the first metal layer,is formed over exposed portions of the gate dielectric layer in which a second device typewill be formed. Each of the first and second device types will have different workfunctions because each will include a different metal in direct contact with the gatedielectric. In one embodiment, the selective deposition of the first metal layer isperformed by ALD and with the use of an inhibitor layer which is selectively formed overthe gate dielectric layer such that the first metal layer may be selectively deposited ononly those portions of the gate dielectric layer which are not covered by the inhibitorlayer.
申请人：Olubunmi O. Adetutu,Lynne M. Michaelson,Kathleen C. Yu,Robert E. Jones
地址：Austin TX US,Austin TX US,Austin TX US,Austin TX US
国籍：US,US,US,US
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