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专利名称：Silicon wafer and fabricating method
therefor
发明人：Young-Hee Mun,Gun Kim,Sung-Ho Yoon申请号：US10156180申请日：20020529
公开号：US200300967A1公开日：20030515
专利附图：
摘要：A method of fabricating a silicon wafer, which includes the steps of preparing asilicon wafer by slicing, grinding, and cleaning an ingot, inserting the silicon wafer in adiffusion furnace having an ambience of one of Ar, Nand inert gas including Ar and N, pre-
heating and maintaining the diffusion furnace at about 500° C., changing the ambienceinto one of H, Ar and inert gas including Hand Ar successively, increasing a temperatureof the diffusion furnace by a temperature-increasing speed of 50˜70 ° C./min between500˜800° C., 10˜50° C./min between 800˜900° C., 0.5˜10 ° C./min between 900˜1000° C.,and 0.1˜0.5° C./min between 1000˜1250° C., maintaining the diffusion furnace at
1200˜1250° C. for 1˜120 min, changing the ambience inside the diffusion furnace into oneof Ar, Nand inert gas ambience including Ar and Nsuccessively, and decreasing thetemperature of the diffusion furnace down to 500 ° C. by a temperature-decreasingspeed of 0.1˜0.5° C./min between 1000˜1250° C., 0.5˜10° C./min between 900˜1000° C.,10˜50° C./min between 800˜900° C., and 50˜70° C./min between 500˜800° C.
申请人：MUN YOUNG-HEE,KIM GUN,YOON SUNG-HO
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