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专利名称：Substrate for semiconductor apparatus发明人：Mituo Osada,Yoshinari Amano,Nobuo
Ogasa,Akira Ohtsuka
申请号：US08/284277申请日：19940802公开号：US054098A公开日：19950425
摘要：This invention relates to a substrate for mounting a semiconductor chip in anintegrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % andtungsten and/or molybdenum is employed as a substrate which efficiently radiates heatdeveloped from the semiconductor chip mounted thereon and said substrate having athermal expansion coefficient similar to those of semiconductor chip and other enclosurematerials.
申请人：SUMITOMO ELECTRIC INDUSTRIES, LTD.
代理机构：Foley & Lardner
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