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专利名称：INSULATING SUBSTRATE FOR
SEMICONDUCTOR APPARATUS,SEMICONDUCTOR APPARATUS, ANDMETHOD FOR MANUFACTURINGSEMICONDUCTOR APPARATUS
发明人：Michiko Takei,Shin Matsumoto,Kazuhide
Tomiyasu,Yasumori Fukushima,YutakaTakafuji
申请号：US12674560申请日：20080908
公开号：US20110272694A1公开日：20111110
专利附图：
摘要：The present invention is intended to provide a glass substrate (), made of aninsulating material, which can constitute a semiconductor apparatus () by transferring asingle crystal silicon film () or a substrate including a semiconductor device onto a surface() of the insulating substrate, a transferred surface () being part of the surface (), thesingle crystal silicon film () capable of being provided on the transferred surface (), andthe transferred surface () having an arithmetic mean roughness of not more than 0.4 nm.
申请人：Michiko Takei,Shin Matsumoto,Kazuhide Tomiyasu,YasumoriFukushima,Yutaka Takafuji
地址：Osaka JP,Osaka JP,Osaka JP,Osaka JP,Osaka JP
国籍：JP,JP,JP,JP,JP
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