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专利名称：CHEMICAL DEPOSITION REACTOR AND
METHOD OF FORMING A THIN FILM USINGTHE SAME
发明人：LEE, Chun-Soo,KANG, Won-Gu,LEE, Kyu-Hong,YI, Kyoung-Soo
申请号：EP00940951.7申请日：20000619公开号：EP1125321A1公开日：20010822
摘要：A chemical deposition reactor capable of switching rapidly from one processgas to another and method of forming a thin film using the same. The reactor of thepresent invention comprises: a reactor cover, having an inlet and an outlet, for keepingreactant gases from other part of the reactor where the pressure is lower than inside ofthe reactor; a gas flow control plate, fixed onto the reactor cover, for controlling the gasflow through inlet and outlet by the spacing between itself and the reactor cover; and asubstrate supporting plate for confining a reaction cell with the reactor cover. Themethod of the present invention can be accomplished using the above reactor. In themethod, process gases including a deposition gas, a reactant gas and a purge gas aresequentially and repeatedly supplied in the reactor to form a thin film on a substrate. ARF (Radio Frequency) plasma power is applied to a plasma electrode of the reactorsynchronised with the supply of at least one among the process gases.
申请人：Genitech, Inc.
地址：1694-5, Sinil-dong,Taedok-ku Taejon 306-230 KR
国籍：KR
代理机构：Kyle, Diana
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