BTS737S3资料

Datasheet BTS737S3

Smart High-Side Power Switch Four Channels: 4 x 35mΩ Advanced Current Sense

Product Summary Package

Operating Voltage Vbb(on) 5.0 ...40V Active channels one four parallel On-state Resistance RON 35mΩ 9mΩ Nominal load current IL(NOM) 5.4A 11.1A Current limitation IL(SCr) 40A 40A P-DSO-28 General Description • • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions Applications • • • • µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads All types of resistive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Functions • Very low standby current • Improved electromagnetic compatibility (EMC) • CMOS compatible input • Stable behaviour at undervoltage • Wide operating voltage range Protection Functions • Short circuit protection • Overload protection • Current limitation • Thermal shutdown • Reverse battery protection with external resistor • Overvoltage protection with external resistor (incl. load dump) • Loss of ground protection • Electrostatic discharge protection (ESD) Block Diagram VbbIN1IS1IS2IN2Load 2IN3IS3IS4IN4LogicChannel 3Channel 4LogicChannel 1Channel 2Load 1Diagnostic Function • Proportional load current sense (with defined fault signal during thermal shutdown and current limit)

Load 3GNDLoad 4Infineon technologies 1 of 15 2004-Feb-19

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Datasheet BTS737S3 Functional diagram

IN1 overvoltageprotectioninternal voltage ESD logic gate control + charge pump current limitVBBclamp for inductive loadOUT1 temperature sensorLOAD IS1 . Proportional sense current channel 1 IN2 IS2 GND1/2

control and protection circuit of channel 2 OUT2 IN3 IS3

control and protection circuit of channel 3 OUT3 IN4 IS4 GND3/4 control and protection circuit of channel 4 OUT4

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Datasheet BTS737S3

Pin Definitions and Functions

Pin configuration

(top view) Pin Symbol Function 1, 7, 8, Vbb Positive power supply voltage. Design the 14, wiring for the simultaneous max. short circuit 15, 28 currents from channel 1 to 4 and also for low

thermal resistance

4 IN1 Input 1,2, 3,4 activates channel 1,2,3,4 in case 3 IN2 of logic high signal 11 IN3 10 IN4 25,26,27 OUT1 Output 1,2,3,4 protected high-side power output 22,23,24 OUT2 of channel 1,23,4. Design the wiring for the 19,20,21 OUT3 max. short circuit current 16,17,18 OUT4

5 IS1 Diagnostic feedback 1 .. 4 of channel 1 to 4 6 IS2 Providing a sense current, proportional to the 12 IS3 load current 13 IS4 2 GND1/2 Ground of chip 1 (channel 1,2) 9 GND3/4 Ground of chip 2 (channel 3,4)

Vbb 1 • 28Vbb 272625242322201918171615OUT1 OUT1 OUT1 OUT2 OUT2 OUT2 OUT3 OUT3 OUT4 OUT4 OUT4 Vbb GND1/2 2 IN2 3 IN1 4 IS1 5 IS2 6 Vbb 7 Vbb 8 GND3/4 9 IN4 10 IN3 11 IS3 12 IS4 13 Vbb 14 21OUT3

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Datasheet BTS737S3 Maximum Ratings at Tj = 25°C unless otherwise specified

Parameter Symbol Values UnitSupply voltage (overvoltage protection see page 6) Vbb 40Supply voltage for full short circuit protection1) Vbb 36Tj,start = -40 ...+150°C

Load current (Short-circuit current, see page 6) IL IL(lim)2Load dump protection3) VLoadDump = VA + Vs, VA = 13.5 V VLoaddump5) 60 RI4) = 2 Ω, td = 400 ms; IN = low or high, each channel loaded with RL = 4.7 Ω,

-40 ...+150Operating temperature range Tj

-55 ...+150Storage temperature range Tstg

Power dissipation (DC)6) Ta = 25°C: Ptot 3.71.9Ta = 85°C: (all channels active)

Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C6),

33 IL = 4.0 A, EAS = 0.8J, 0 Ω one channel: ZL

37 IL = 6.0 A, EAS = 1.0J, 0 Ω two parallel channels:

IL = 9.5 A, EAS = 1.5J, 0 Ω four parallel channels:

see diagrams on page 10

Electrostatic discharge capability (ESD) IN: VESD 1.0 (Human Body Model) IS: 4.0 out to all other pins shorted: 8.0 acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF Input voltage (DC) VIN -10 ... +16

IIN Current through input pin (DC) ±0.3

±0.3Current through sense pin (DC) IIS

see internal circuit diagram page 9

VV

V°CW

mH

kV

VmA

1) Single pulse

2) Current limit is a protection function. Operation in current limitation is considered as \"outside\" normal

operating range. Protection functions are not designed for continuous repetitive operation. 3) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 75Ω

resistor for the GND connection is recommended.

4) R = internal resistance of the load dump test pulse generator

IVLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V

bb

connection. PCB is vertical without blown air. See page 15

5)

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Datasheet BTS737S3 Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ Max

Thermal resistance

Rthjs junction - soldering point7)8), each channel: -- -- 11K/W

junction – ambient8) Rthja

-- --@ 6 cm2 cooling area one channel active: 40 -- -- all channels active: 33

Electrical Characteristics

Parameter and Conditions, each of the four channels Symbol Values Unit

at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ Max Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT); IL = 5 A each channel, Tj = 25°C:see diagram, page 11 Tj = 150°C: Nominal load current one channel active: two parallel channels active: four parallel channels active: Device on PCB8), Ta = 85°C, Tj ≤ 150°C Output current while GND disconnected, VIN = 0, see diagram page 10; (not subject to production test - specified by design) RON -- 30 -- 55 IL(NOM) 5.0 5.4 6.7 7.4 10.5 11.1 IL(GNDhigh) 35------mΩA-- -- 1mATurn-on time9) IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω Slew rate on 9) VOUT rising from 10 to 30% of Vbb, RL = 12 Ω: Slew rate off 9) VOUT falling from 70 to 40% of Vbb, RL = 12 Ω: ton toff -- -- 50 120 150250µs-- 0.9dV/dton 0.2 -dV/dtoff 0.1 -- 0.9V/µsV/µs 7) Soldering point: upper side of solder edge of device pin 7,8. See page 16.

8) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V

bb

connection. PCB is vertical without blown air. See page 15 9) See timing diagram on page 12.

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Datasheet BTS737S3 Operating Parameters Operating voltage Overvoltage protection10) I bb = 40 mA Standby current11) Tj =-40...25°C:

Tj =150°C: VIN = 0; see diagram page 12

Tj =125°C:(not subject to production test - specified by design) Off-State output current Tj =-40...25°C:(included in Ibb(off))VIN = 0; each channel; Tj=150°C:Operating current, VIN = 5V, IGND = IGND1/2 + IGND3/4,

-- 40VVbb(on) 5.0 Vbb(AZ) 41 47 52V

Ibb(off) -- 10 25µA

-- 40 80

-- 25IL(off) IGND

-- -- -- --

1 -- 1.6 6.0

615----µA

one channel on: four channels on:

mA

Protection Functions12)

Current limit, (see timing diagrams, page 13)

Repetitive short circuit current limit, Tj = Tjt each channel two,three or four parallel channels (see timing diagrams, page 13)

IL(lim) 36 45 58A IL(SCr) -- 40 --A

-- 40

--Initial short circuit shutdown time Tj,start =25°C: toff(SC) -- 4 --ms (see timing diagrams on page 13) Output clamp (inductive load switch off)13) at VON(CL) = Vbb - VOUT, IL= 40 mA VON(CL) 47 5241 VThermal overload trip temperature Tjt 150 -- --°CThermal hysteresis ∆Tjt -- 10 --K

Reverse Battery (not subject to production test - specified by design) Reverse battery voltage 14) -Vbb -- -- 14V

Drain-source diode voltage (Vout > Vbb)15 -VON IL = -2A; Tj = +150°C: -- 500 --mV

10) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 75Ω

resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram on page 9.

11) Measured with load; for the whole device; all channels off.

12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in

the data sheet. Fault conditions are considered as \"outside\" normal operating range. Protection functions are not designed for continuous repetitive operation.

13) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest

VON(CL).

14)

The temperature protection and sense functionality is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and circuit page 9).

15) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load.

Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode.

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Datasheet BTS737S3 Input16)

Input resistance (see circuit page 9)

Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current On state input current

RI

2.5

3.5 6.0

kΩ

VIN(T+) 1.7 -- 3.2VVIN(T-) 1.5 -- --V∆ VIN(T) -- 0.3 --V

VIN = 0.4 V: IIN(off) 1 -- 35 µA VIN = 5 V: IIN(on) 20 50 90µA

kILIS IL = 10 A: IL = 2 A:IL = 1 A:IL = 0.5 A: Vfault tdelay(fault) IIS,lim VIS(lim) IIS(LL) IIS(LH) tson(IS)

Diagnostic Characteristics

Current sense ratio, static on-condition, kILIS =IL:IIS -- 4575 4100 4200 3580 5 3005300 5300 5300 5800 --6000630066008080VmsmAVµASense signal in case of fault-conditions17) Sense signal delay after thermal shutdown18) (not subject to production test - specified by design) Sense current saturation Current sense output voltage limitation IIS = 0, IL = 5 A: Current sense leakage/offset current VIN=0, VIS = 0, IL = 0: VIN=5 V, VIS = 0, IL = 0: Current sense settling time to IIS static±10% after positive input slope, IL = 0 5 A, (not subject to production test - specified by design) 5.4 6.3 7.5-- -- 14 -- -- 5.4 6.3 7.51--300 -- -- -- 2.5 -- -- µs 16) If ground resistors R

GND are used, add the voltage drop across these resistors.

17) In the case of current limitation or thermal shutdown the sense signal is no longer a current proportional to

the load current, but a fixed voltage of typ. 6 V.

18) In the case of thermal shutdown the V signal remains for t

faultdelay(fault) longer than the restart of the switch (see

diagram on page 14).

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Datasheet BTS737S3 Truth Table

Normal Operation Current-

Limitation19) Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output Voltage clamp

Input level L H

Outputlevel L H

Current Sense IIS 0 nominal

H H Vfault L H L H L H L H

L L L L H H Z H

0 Vfault 0 Vfault 0

0 0

L L 0

L = \"Low\" Level X = don't care Z = high impedance, potential depends on external circuit H = \"High\" Level Vfault = 6V typ, constant voltage independent of external used sense resistor.

Parallel switching of channels is possible by connecting the inputs and outputs in parallel. The current sense outputs have to be connected with a single sense resistor.

Terms

IbbVbbIIN1IIN2VIN1VIN2VIS1IIS1IIS2VIS23526IN1IN2IS1IS2PROFETChip 1GND1/24IIGND1/2VOUT1VOUT2VbbOUT1Leadframe252627222324VON1IL1VON2VbbVIN3IIN3IIN4IIS3VIN4VIS3IIS4VIS4Leadframe1012913IN3IN4IS3IS4PROFETChip 2GND3/411IIGND3/4VOUT3VOUT4VbbOUT3192021161718VON3IL3VON4IL2IL4OUT2OUT4

Leadframe (Vbb) is connected to pin 1, 7, 8, 14, 15, 28.

19) Current limitation is only possible while the device is switched on.

20) Low ohmic short to V may reduce the output current I and therefore also the sense current I. bbLIS

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Datasheet BTS737S3 Input circuit (ESD protection), IN1 to IN4 Overvoltage output clamp, OUT1 or OUT2 +VbbVZRINIESD-ZDIGNDIIVONOUT The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Power GND Sense output Normal operation: IS = IL / kILIS VIS = IS * RIS; RIS = 1 kΩ nominal RIS > 500Ω VON clamped to VON(CL) = 47 V typ. Overvoltage protection of logic part GND1/2 or GND3/4 + VbbIISSense outputlogicISVISINRILogicVZ2VfESD-ZDGNDRISISV ESD-Zener diode: VESD = 6.1 V typ., max 14 mA; Operation under fault condition so as thermal shut down or current limitation Z1RISIntegratedGND resistorRGNDGNDSignal GND Sense outputlogicVfaultVfESD-ZDGNDVfaultVZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ., RGND = 75 Ω RReverse battery protection ISLogic-Vbb Vfault = 6V typ Vfault < VESD under all conditions INISRILogicMOSFETOUTPowerMOSFETIntegratedGND resistorRGNDRISSignal GNDRLPower GND RGND = 75 Ω, RI = 3.5 kΩ typ, Temperature protection and sense functionality is not active during inverse current operation. Infineon technologies 9 2004-Feb-19

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Datasheet BTS737S3 GND disconnect Inductive load switch-off energy dissipation EbbVbbPROFETOUTINVbbPROFETGNDOUTEASELoadINIS=VGNDVbbVINVISGNDZLST {RLLELERAny kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+). Due to VGND > 0, no VST = low signal available. Energy stored in load inductance: EL = 1/2·L·IL While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: 2Vbb disconnect with energized inductive load highINVbbPROFETOUTISGNDEAS= IL·LIL·RL(Vbb + |VOUT(CL)|) ln (1+ ) |VOUT(CL)|2·RL Vbb Maximum allowable load inductance for a single switch off (one channel)6) L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω ZL [mH] 1000For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 10) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb dis-connection with energized inductive load all the load current flows through the GND connection. 1001010.101234567 IL [A] Infineon technologies 10 2004-Feb-19

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Datasheet BTS737S3 Typ. on-state resistance RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [mOhm] 60Tj = 150°C501803025°C-40°C2003 5 7 9 30 Vbb [V] 40Typ. standby current Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2,3,4 = low Ibb(off) [µA] 454035302520151050-50050100150200 Tj [°C] Infineon technologies 11 2004-Feb-19

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Datasheet BTS737S3 Functionality diagrams All diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels

Figure 1a: Switching a resistive load, change of load current in on-condition: INVOUTtontslc(IS)tofftslc(IS)ILFigure 1c: Behaviour of sense output:

Sense current (IS) and sense voltage (VS) as function of load current dependent on the sense resistor

Shown is VS and IS for three different sense

resistors. Curve 1 refers to a low resistor, curve 2 to a medium-sized resistor and curve 3 to a big resistor. Note, that the sense resistor may not fall short of a minimum value of 500Ω.

VSLoad 1IS,VStson(IS)Load 2VESDVfault32tsoff(IS)t 1The sense signal is not valid during settling time after turn on or change of load current.

ISIL123Figure 1b: Vbb turn on: INVbbIL(lim)

ILILIS = IL / kILIS

RIS = 1 kΩ nominal VIS = IS * RIS;

RIS > 500Ω

IS,VS proper turn on under all conditions

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Datasheet BTS737S3 Figure 2a: Switching a lamp: INFigure 3a: Short circuit: shut down by overtempertature, reset by cooling INILSTIL(lim)IL(SCr)VOUTVSILVfaulttThe initial peak current should be limited by the lamp and not by the current limit of the device. Heating up may require several milliseconds, depending on external conditions IL(lim’) = 45 A typ. increases with decreasing temperature. Figure 2b: Switching a lamp with current limit: The behaviour of IS and VS is shown for a resistor, which refers to curve 1 in figure 1c IN Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) IN1/2VOUTIL1 + IL2IL(SCp)ILIL(SCr)IStoff(SC)VfaultVS1, VS2VSVfaultt Infineon technologies 13 2004-Feb-19

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Datasheet BTS737S3 Figure 4a: Overtemperature: Reset if Tj 元器件交易网www.cecb2b.com

Datasheet BTS737S3 Package and Ordering CodeStandard: P-DSO-28-16

Sales Code

BTS 737 S3 Q67060-S6133

2.65 maxOrdering Code

0.2-0.10.35 x 45˚+0.09Published by

Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München

© Infineon Technologies AG 2001 All Rights Reserved.

2.45-0.20.238˚ max7.6-0.21)

Attention please!

The information herein is given to describe certain

components and shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

1.270.35+0.152)0.40.228x28150.1+0.810.3±0.3We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

GPS051231Index Marking18.1-0.41)141) Does not include plastic or metal protrusions of 0.15 max rer side2) Does not include dambar protrusion of 0.05 max per sideAll dimensions in millimetres Definition of soldering point with temperature Ts: upper side of solder edge of device pin 15.

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Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm2 active heatsink area) as a reference for max. power dissipation Ptot, nominal load current IL(NOM) and thermal resistance Rthja

Pin 7,8

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