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专利名称：Photoresist pattern, method of fabricating
the same, and method of assuring thequality thereof
发明人：Yeon-Dong Choi,Kyoung-Yun Baek申请号：US11026100申请日：20050103公开号：US07012031B2公开日：20060314
专利附图：
摘要：A photoresist pattern and a method of fabricating the same make it easy toquickly identify a particular portion of a photolithography process that is responsible for
causing process defects. The method of fabricating the photoresist pattern includesforming main patterns having a predetermined critical dimension in device-formingregions of a semiconductor substrate, and forming a plurality of test patterns in scriberegions of the substrate. The scribe regions are defined alongside the device-formingregions and separate the device-forming regions from one another. The test patternshave shapes similar to that of the main patterns. Also, one of the test patterns has acritical dimensions similar to that of the main patterns, and other test patterns haverespective critical dimensions that are different from the critical dimension of the mainpatterns.
申请人：Yeon-Dong Choi,Kyoung-Yun Baek
地址：Ansan-si KR,Anyang-si KR
国籍：KR,KR
代理机构：Volentine Francos & Whitt, PLLC
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