irf7240pbf

IRF7240PbF

HEXFET® Power MOSFET

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Ultra Low On-ResistanceP-Channel MOSFETSurface Mount

Available in Tape & ReelLead-Free

VDSS

-40V

RDS(on) max

0.015@VGS = -10V0.025@VGS = -4.5V

ID

-10.5A-8.4A

Description

These P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve the extremely low on-resistance per siliconarea. This benefit provides the designer with anextremely efficient device for use in battery and loadmanagement applications..

The SO-8 has been modified through a customizedleadframe for enhanced thermal characteristics andmultiple-die capability making it ideal in a variety ofpower applications. With these improvements, multipledevices can be used in an application with dramaticallyreduced board space. The package is designed forvapor phase, infrared, or wave soldering techniques.

S1287ADDDDSSG3465Top ViewSO-8Absolute Maximum Ratings

Parameter

VDS

ID @ TA = 25°CID @ TA= 70°CIDM

PD @TA = 25°CPD @TA = 70°CVGS

TJ, TSTG

Drain- Source Voltage

Continuous Drain Current, VGS @ -10VContinuous Drain Current, VGS @ -10VPulsed Drain Current 󰀃Power Dissipation 󰀂Power Dissipation󰀂Linear Derating FactorGate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-40-10.5-8.6-432.51.620 ± 20-55 to + 150

Units

VAWmW/°CV°C

Thermal Resistance

Parameter

RθJA

Maximum Junction-to-Ambient󰀂

Max.

50

Units

°C/W

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06/06/05

IRF7240PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

Parameter

Drain-to-Source Breakdown VoltageBreakdown Voltage Temp. CoefficientStatic Drain-to-Source On-ResistanceGate Threshold VoltageForward TransconductanceDrain-to-Source Leakage CurrentGate-to-Source Forward LeakageGate-to-Source Reverse LeakageTotal Gate Charge

Gate-to-Source Charge

Gate-to-Drain (\"Miller\") ChargeTurn-On Delay TimeRise Time

Turn-Off Delay TimeFall Time

Input CapacitanceOutput Capacitance

Reverse Transfer Capacitance

RDS(on)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)tr

td(off)tfCissCossCrss

Min.-40–––––––––-1.017––––––––––––––––––––––––––––––––––––––––––Typ.Max.UnitsConditions––––––VVGS = 0V, ID = -250µA

-0.025–––V/°CReference to 25°C, ID = -1mA––– 0.015VGS = -10V, ID = -10.5A 󰀅

Ω

––– 0.025VGS = -4.5V, ID = -8.4A 󰀅–––-3.0VVDS = VGS, ID = -250µA––––––SVDS = -10V, ID = -10.5A–––-15VDS = -32V, VGS = 0V

µA

–––-25VDS = -32V, VGS = 0V, TJ = 70°C–––-100VGS = -20V

nA

–––100VGS = 20V73110ID = -10.5A3147nCVDS = -20V1726VGS = -10V52–––VDD = -20V 󰀅490–––ID = -1.0A

ns

210–––RG = 6.0Ω97–––VGS = -10V9250–––VGS = 0V580–––pFVDS = -25V520–––ƒ = 1.0kHz

Source-Drain Ratings and Characteristics

ISISMVSDtrrQrr ParameterContinuous Source Current(Body Diode)Pulsed Source Current(Body Diode) 󰀃Diode Forward VoltageReverse Recovery TimeReverse Recovery ChargeMin.Typ.Max.Units󰀄󰀄󰀄󰀄󰀄󰀄–––––––––󰀄󰀄󰀄󰀄󰀄󰀄-2.5A-43Vns nC–––-1.243 6575 110 ConditionsDMOSFET symbolshowing theGintegral reversep-n junction diode.STJ = 25°C, IS = -2.5A, VGS = 0V 󰀅TJ = 25°C, IF = -2.5Adi/dt = -100A/µs 󰀅Notes:

󰀁 Repetitive rating; pulse width limited by

max. junction temperature.

󰀃 Surface mounted on 1 in square Cu board, t ≤ 5sec.

󰀂 Pulse width ≤ 400µs; duty cycle ≤ 2%.

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1000VGSTOP-15V-10V)A-4.5V(-3.7V t-3.5Vn 100e-3.3Vr-3.0VruBOTTOM-2.7VC ec 10ruoS-ot-n 1iarD , D0.1I--2.70V20µs PULSE WIDTH0.01T = 25J°C0.1 1 10 100-V , Drain-to-Source Voltage (V)DSFig 1. Typical Output Characteristics 100)A( T = 150 CtJ°ner 10ruC ecruoS 1T = 25 C-J°ot-niarD 0.1, DI-V = -25VDS0.0120µs PULSE WIDTH2.53.03.54.04.5-V , Gate-to-Source Voltage (V)GSFig 3. Typical Transfer Characteristicswww.irf.comIRF7240PbF

1000VGSTOP-15V-10V)A-4.5V(-3.7V t-3.5Vne-3.3Vr 100-3.0VruBOTTOM-2.7VC ecruoS 10-ot-niarD-2.70V 1, DI-20µs PULSE WIDTH0.1T = 150J°C0.1 1 10 100-V , Drain-to-Source Voltage (V)DSFig 2. Typical Output Characteristics2.0eID=-10.5AcnatsiseR1.5 nO) deeczriluoaSm1.0r-oot-Nn(iarD 0.5, ) n o ( S DRV0.0GS=-10V-60-40-20020406080100120140160T , Junction TemperatureJ( C)°Fig 4. Normalized On-ResistanceVs. Temperature

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IRF7240PbF

16000

VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = Cgd 12000

Coss = Cds + CgdF)p(Cissecnatic8000

apaC ,C4000

Coss0Crss1

10

100

-VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage 100)A( tnerT = 150 CrJ°uC 10 niarD esrevT = 25 CJ°eR 1 , D SI-V = 0 V 0.1GS0.40.60.81.01.2-V ,Source-to-Drain Voltage (V)SDFig 7. Typical Source-Drain DiodeForward Voltage

420ID=-10.5A)VVDS=-32V( eVDS=-20Vg16aVDS=-8VtloV ec12ruoS-ot-e8taG , S 4VG-0020406080100Q , Total Gate Charge (nC)GFig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

100OPERATION IN THIS AREA LIMITEDBY RDS(on))100usA( tnerruC n 101msiarD , DI-10ms T° TA= 25 CJ= 150 C° 1 Single Pulse0.1 1 10 100-V , Drain-to-Source Voltage (V)DSFig 8. Maximum Safe Operating Areawww.irf.com

IRF7240PbF

12VDS10RDVGSRGD.U.T.-+-I , Drain Current (A)D8VDD

6VGSPulse Width ≤ 1 µsDuty Factor ≤ 0.1 %4Fig 10a. Switching Time Test Circuit

2VGStd(on)trtd(off)tf025507510012515010%°T , Case Temperature( C)C90%VDSFig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

100D = 0.50 100.200.100.05 10.020.01PDMt10.1SINGLE PULSE(THERMAL RESPONSE)Notes:1. Duty factor D =t / t122. Peak TJ=PDMx ZthJA+ TA0.010.1 1 10 100t2Thermal Response(Z t h J A )0.010.000010.00010.001t , Rectangular Pulse Duration (sec)1Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambientwww.irf.com5

IRF7240PbF

RDS(on), Drain-to -Source On Resistance (Ω)RDS (on) , Drain-to-Source On Resistance (Ω)0.0350.025

0.0300.020

VGS = -4.5V0.0250.0200.015

VGS = -10V0.010

0

10

20

30

40

50

-ID , Drain Current (A)

0.015ID = -10.5A0.0100.04.08.012.016.0-VGS, Gate -to -Source Voltage (V)

Fig 12. Typical On-Resistance Vs.

Gate Voltage

Fig 13. Typical On-Resistance Vs.

Drain Current

CurrentRegulatorSameTypeasD.U.T.50KΩQGQGSVGQGD12V.2µF.3µF-D.U.T.VGS-3mA+VDSChargeIGIDCurrentSamplingResistorsFig 14a. Basic Gate Charge WaveformFig 14b. Gate Charge Test Circuit

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3.0) V( e2.5caira V , )hID = -250µAt(SG2.0-V1.5-75-50-250255075100125150TJ , Temperature ( °C )

Fig 15. Typical Vgs(th) Variance Vs.

Juction Temperature

www.irf.comIRF7240PbF200160)W120( rewoP804000.0010.0100.1001.00010.000100.000Time (sec)

Fig 16. Typical Power Vs. Time

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IRF7240PbF

SO-8 Package Outline

Dimensions are shown in millimeters (inches)DA5BDIMAbINCHESMIN.0532.013.0075.1.1497MAX.0688.0098.020.0098.1968.1574MILLIMETERSMIN1.350.100.330.194.803.80MAX1.750.250.510.255.004.00A1.00406E8765H0.25 [.010] AcDEee1HKLy1234.050 BASIC.025 BASIC.2284.0099.016 0°.2440.0196.050 8°1.27 BASIC0.635 BASIC5.800.250.40 0°6.200.501.27 8°6Xee1AC0.10 [.004] yK x 45°8X b0.25 [.010] A1CAB8X L78X cNOTES:1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.2. CONTROLLING DIMENSION: MILLIMETER3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.3X 1.27 [.050]6.46 [.255]FOOTPRINT8X 0.72 [.028]8X 1.78 [.070]SO-8 Part MarkingEXAMPLE: THIS IS AN IRF7101 (MOSFET)DATE CODE (YWW)P = DESIGNATES LEAD-FREEPRODUCT (OPTIONAL)Y = LAST DIGIT OF THE YEARWW = WEEKA = ASSEMBLY SITE CODELOT CODEPART NUMBERINTERNATIONALRECTIFIERLOGOXXXXF71018www.irf.comIRF7240PbF

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 112.3 ( .484 )11.7 ( .461 )8.1 ( .318 )7.9 ( .312 )FEED DIRECTIONNOTES:1. CONTROLLING DIMENSION : MILLIMETER.2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00(12.992) MAX.14.40 ( .566 )12.40 ( .488 )NOTES :1. CONTROLLING DIMENSION : MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-541.Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/05

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