SI2300 N-ChannelEnhancementModeFieldEffectTransistorSOT-232.90.4Unit:mmFeatures
VDS=20V,RDS(ON)=40mVDS=20V,RDS(ON)=60mVDS=20V,,RDS(ON)=75m
@VGS=4.5V,ID=5.0A@VGS=2.5V,ID=4.0A@VGS=1.8V,ID=1.0A
02.4001.30120.951.90.550.430.10.9700.380001.Base1.Gate2.Emitter2.Source0-0.13.Drain3.collectorAbsoluteMaximumRatingsTa=25
ParameterDrain-SourceVoltageGate-SourceVoltageDrain-Current-Continuous*TJ=125-PulsedPowerDissipation*ThermalResistance,Junction-to-AmbientOperatingJunctionandStorageTemperatureRange*SurfaceMountedonFR4Board,t
10sec.
SymbolVDSVGSIDIDMPDRthJATj.TstgRating20103.8151.25100-55to150UnitVVAAW/W1SI2300 N-ChannelEnhancementModeFieldEffectTransistorElectricalCharacteristicsTa=25
ParameterDrain-SourceBreakdownVoltageZeroGateVoltageDrainCurrentGate-BodyLeakageGateThresholdVoltage*Drain-Sourceon-stateResistance*SymbolVDSSIDSSIGSSVGS(th)TestconditionsVGS=0V,ID=250uAVDS=20V,VGS=0VVGS=10V,VDS=0V0.60.78325062185888VDS=15V,VGS=0V,f=1.0MHZ14411531.8VDD=10V,ID=1A,VGS=4.5V,RL=10,RGEN=614.550.331.916.8VDS=10V,ID=3.5A,VGS=4.5V2.55.41.25VGS=0V,IS=1.25A0.8251.2VGS=VDS,ID=250uAVGS=4.5V,ID=5.0ARDS(ON)VGS=2.5V,ID=4.0AVGS=1.8V,ID=1.0AOn-StateDrainCurrent*ForwardTransconductance*InputCapacitanceOutputCapacitanceReverseTransferCapacitanceTurn-OnDelayTimeRiseTimeTurn-OffDelayTimeFallTimeTotalGateChargeGate-SourceChargeGate-DrainChargeDrain-SourceDiodeForwardCurrent*DiodeForwardVoltage*PulseTest:PulseWidth
300s,DutyCycle
2%
ID(ON)gFSCISSCOSSCRSStD(on)trtD(off)tfQgQgsQgdISVSDVDS=5V,VGS=4.5VVDS=5V,ID=5AMin2011001.5406075TypMaxUnitVuAnAVmmmASpFpFpFnsnsnsnsnCnCnCAV■ MarkingMarking
