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1N5231B[1]

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Zeners (1N5226B - 1N5257B)Zeners1N5226B - 1N5257BAbsolute Maximum Ratings* T = 25°C unless otherwise notedATolerance: B = 5% Symbol Parameter Value 500 4.0 -65 to +200 + 200 + 230 Units mW mW/°C °C °C °C PD Power Dissipation Derate above 75°C TSTG Storage Temperature Range TJ Maximum Junction Operating Temperature Lead Temperature (1/16” from case for 10 seconds) Surge Power** 10 W *These ratings are limiting values above which the serviceability of the diode may be impaired.**Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C.NOTES:1) These ratings are based on a maximum junction temperature of 200 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.DO-35COLOR BAND DENOTES CATHODEElectrical Characteristics T = 25°C unless otherwise notedA Device 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B (V) VZ ZZ (Ω) @ (mA) IZT 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 ZZK (Ω) @(mA) IZK VR (V) @IR (µA) (%/°C) - 0.07 - 0.065 - 0.06 +/- 0.055 +/- 0.03 +/- 0.03 0.038 0.038 0.045 0.05 0.058 0.062 0.065 0.068 0.075 0.076 TC 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 28 24 23 22 19 17 11 7.0 7.0 5.0 6.0 8.0 8.0 10 17 22 1,600 1,700 1,900 2,000 1,900 1,600 1,600 1,600 1,000 750 500 500 600 600 600 600 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 25 15 10 5.0 5.0 5.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 3.0 3.0 2.0 VF Forward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series 2002 Fairchild Semiconductor Corporation1N5226B-1N5257B Rev. C

Zeners (1N5226B - 1N5257B)Zeners (1N5226B - 1N5257B)(continued)Electrical Characteristics (Continued) T = 25°C unless otherwise notedA Device 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B (V) VZ 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 ZZ (Ω) (mA) IZT ZZK (Ω) (mA) IZK VR (V) IR (µA) (%/°C) 0.077 0.079 0.080 0.082 0.083 0.084 0.085 0.085 0.086 0.087 0.088 0.088 0.089 0.090 0.091 0.092 TC 30 13 15 16 17 19 21 23 25 29 33 35 41 44 49 58 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 9.1 9.9 10 11 12 13 14 14 15 17 18 19 21 21 23 25 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VF Forward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series 2002 Fairchild Semiconductor Corporation1N5226B-1N5257B Rev. C

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PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationAdvance Information

Product StatusFormative orIn DesignFirst Production

Definition

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Preliminary

No Identification NeededFull Production

ObsoleteNot In Production

Rev. H5

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