Interconnect structure and method of making same

专利名称：Interconnect structure and method of

making same

发明人：Christina M. Boyko,Donald S.

Farquhar,Konstantinos I. Papathomas

申请号：US10436592申请日：20030512

公开号：US20030172525A1公开日：20030918

专利附图：

摘要：An interconnect structure having an increased chip connector pad and platedthrough hole density is provided. In particular, the interconnect structure includes a

substrate having at least one plated through hole therein, and a first conductive layersealing the at least one plated through hole. The substrate includes a layer of dielectricmaterial thereon. The dielectric layer includes at least one aperture selectivelypositioned directly over the at least one plated through hole. The substrate furtherincludes a metal layer, at least a pair of conductive layers that can carry signals, and atleast another pair of conductive layers that can carry power, wherein the pair of

conductive layers are shielded by the metal layer and the other pair of conductive layers.

申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION

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