专利名称：METAL CAPACITOR AND METHOD OF
MAKING THE SAME
发明人：Chin-Sheng Yang申请号：US13342106申请日：20120101
公开号：US20120098094A1公开日：20120426
专利附图：
摘要：A metal capacitor structure is disclosed. The metal capacitor structure includes:a dielectric layer having a first region and a second region, a dielectric constant of thedielectric layer in the second region being higher than a dielectric constant of the
dielectric layer in the first region; a dual damascene metal interconnection positioned inthe first region; and a damascene capacitor electrode positioned in the second region.
申请人：Chin-Sheng Yang
地址：Hsinchu City TW
国籍：TW
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