Semiconductor memory device with vertical channel

专利名称：Semiconductor memory device with vertical

channel formed on semiconductor pillars

发明人：Hyeoung-won Seo,Jae-man Yoon,Kang-yoon

Lee,Dong-gun Park,Bong-soo Kim,Seong-goo Kim

申请号：US12118268申请日：20080509公开号：US08039896B2公开日：20111018

专利附图：

摘要：In a semiconductor memory device having a vertical channel transistor a body of

which is connected to a substrate and a method of fabricating the same, the

semiconductor memory device includes a semiconductor substrate including a plurality ofpillars arranged spaced apart from one another, and each of the pillars includes a bodyportion and a pair of pillar portions extending from the body portion and spaced apartfrom each other. A gate electrode is formed to surround each of the pillar portions. Abitline is disposed on the body portion to penetrate a region between a pair of the pillarportions of each of the first pillars arranged to extend in a first direction. A wordline isdisposed over the bitline, arranged to extend in a second direction intersecting the firstdirection, and configured to contact the side surface of the gate electrode. A first dopedregion is formed in the upper surface of each of the pillar portions of the pillar. A seconddoped region is formed on the body portion of the pillar and connected electrically tothe bitline. Storage node electrodes are connected electrically to the first doped regionand disposed on each of the pillar portions.

申请人：Hyeoung-won Seo,Jae-man Yoon,Kang-yoon Lee,Dong-gun Park,Bong-sooKim,Seong-goo Kim

地址：Yongin-si KR,Seoul KR,Seongnam-si KR,Seongnam-si KR,Seongnam-si KR,SeoulKR

国籍：KR,KR,KR,KR,KR,KR

代理机构：Onello & Mello LLP

更多信息请下载全文后查看