专利名称：157 nm laser system and method for multi-layer semiconductor failure analysis
发明人：Michael J. Scaggs申请号：US09733874申请日：20001208公开号：US06795456B2公开日：20040921
专利附图：
摘要：A failure analysis system and method for multi-layer semiconductor devices,including a molecular fluorine laser system for producing a 157 nm beam and an imagingsystem for imaging the beam onto the semiconductor device. The laser beam etches
away one or more top (passivation) layers to expose layers disposed underneath.Circuitry formed in exposed layers can then be tested.
申请人：LAMBDA PHYSIK AG
代理机构：Stallman & Pollock LLP
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