UT2327资料

UNISONIC TECHNOLOGIES CO., LTD UT2327 P-CHANNEL ENHANCEMENT MODE 󰂄 DESCRIPTION The UTC UT2327L is P-channel enhancement mode Power MOSFET, designed in serried ranks.with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Power MOSFET 321SOT-23󰂄 SYMBOL 2.Drain1.Gate*Pb-free plating product number: UT2327L3.Source Pin Assignment Packing 1 2 3 S G D Tape Reel 󰂄 ORDERING INFORMATION Ordering Number PackageNormal Lead Free Plating UT2327-AE3-R UT2327L-AE3-R SOT-23 UT2327L-AE3-R(1)Packing Type(2)Package Type(3)Lead Plating(1) R: Tape Reel(2) AE3: SOT-23(3) L: Lead Free Plating, Blank: Pb/Sn 󰂄 MARKING 23A Lead Plating www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-108,A 元器件交易网www.cecb2b.com

UT2327 󰂄 ABSOLUTE MAXIMUM RATINGS (Ta = 25󰄊, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Pulsed Drain Current (Note1, 2) Total Power Dissipation (Ta=25󰄊) Power MOSFET Ta=25󰄊Ta=70󰄊Junction Temperature Storage Temperature Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL RATING UNITS VDS - 20 V VGS ± 12 V -2.6 A ID -2.1 A IDM -10 A W PD 1.38 󰄊 TJ +150 󰄊 TSTG -55 ~ +150 󰂄 THERMAL DATA PARAMETER Junction to Ambient (Note3) SYMBOL MIN TYP MAX UNIT θJA 90 󰄊/W 󰂄 ELECTRICAL CHARACTERISTICS (TJ=25󰄊, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAXUNITSOFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -20 V TJ=25℃ VDS=-20V, VGS=0V -1 uA IDSS Drain-Source Leakage Current TJ=70℃ VDS=-16V, VGS=0V -10uA Gate-Source Leakage Current IGSS VGS=±12V ±100nA -0.1 V/℃Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJReference to 25℃, ID=-1mA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250uA -0.5 V VGS=-5V, ID=-2.8A 130mΩ Drain-Source On-State Resistance (Note2) RDS(ON) VGS=-2.8V, ID=-2.0A 190mΩForward Transconductance gFS VDS=-5V, ID=-2.8A 4.4 S DYNAMIC CHARACTERISTICS Input Capacitance CISS 295 pF VGS=0V, VDS=-6V, f=1.0MHz Output Capacitance COSS 170 pF Reverse Transfer Capacitance CRSS 65 pF SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) tD(ON) 5.2 ns VDS=-15V, VGS=-10V, Turn-ON Rise Time tR 9.7 ns ID=-1A, RG=6Ω, RD=15Ω Turn-OFF Delay Time tD(OFF) 19 ns Turn-OFF Fall Time tF 29 ns Total Gate Charge (Note2) QG 5.2 10nC VDS=-6V, VGS=-5V, ID=-2.8AGate-Source Charge QGS 1.36 nC 0.6 nC Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS TJ=25℃, IS=-1.6A, VGS=0V -1.2 V Drain-Source Diode Forward Voltage(Note2) VSD Maximum Continuous Drain-Source Diode IS VD=VG=0V, VS=-1.2V -1 A Forward Current Maximum Pulsed Drain-Source Diode ISM -10 A Forward Current (Note1) Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 23. Surface mounted on 1 in copper pad of FR4 board; 270℃/W when mounted on min. www.unisonic.com.tw QW-R502-108,A UNISONIC TECHNOLOGIES CO., LTD 2 of 5 元器件交易网www.cecb2b.com

UT2327 󰂄 TYPICAL CHARACTERISTICS Power MOSFET Fig 1. Typical Output Characteristics5TA = 25℃4Drain Current, ID(A)Fig 2. Typical Output Characteristics5TA = 150℃VGS= -5VVGS= -4VVGS= -3V3VGS= -5VVGS= -4VVGS= -3VDrain Current, ID(A)432100123456Drain-to-Source Voltage, VDS(V)VGS= -2V2100123456 VGS= -2VDrain-to-Source Voltage, VDS(V)Fig 4. Normalized On-Resistance1.81.6Normalized RDS(ON) Fig 3. On-Resistance vs. Gate Voltage800600RDS(ON) (Ω)ID= -2ATA=25󰄊ID= -2.8AVGS= -5V1.41.210.840020000246810Gate-to-Source Voltage, VGS(V)0.6-50050100150Junction Temperature, Tj(󰄊)Fig 6. Gate Threshold Voltage vs.Junction Temperature1.5 Fig 5. Forward Characteristic ofReverse Diode101TJ=150󰄊0TJ =25󰄊Gate Threshold Voltage, VGS(TH) (V)1.3Continuous Source Current, IS(A)1.00.500.10.30.50.70.91.1Source-to-Drain Voltage, VSD(V)0.0-50050100Junction Temperature, TJ (󰄊)150 www.unisonic.com.tw QW-R502-108,A UNISONIC TECHNOLOGIES CO., LTD 3 of 5 元器件交易网www.cecb2b.com

UT2327 󰂄 TYPICAL CHARACTERISTICS(Cont.) Fig 7. Gate Charge Characteristics51000ID=-2.8AVDS=-6V Power MOSFET Fig 8. Typical Capacitance Characteristicsf=1.0MHzCISSGate to Source Voltage, VGS(V)432100COSSC (pF)100CRSS024Total Gate Charge, QG(nC)61357911Drain-to-Source Voltage,VDS(V)13 Fig 9. Maximum Safe Operating AreaNormalized Thermal Response (θja)Fig 10. Effective Transient Thermal Impedance1100100.1ID(A)11ms10ms0.01PDMtTDuty factor = t/TPeak TJ = PDM x θja+ Taθja = 270℃/W0.1TA=25°CSingle Pulse110100ms1sDC1000.010.1 0.0010.00010.0010.010.11101001000Drain-to-Source Voltage,VDS(V)Fig 11. Switching Time WaveformVDS90%Pulse Width, t (s)Fig 12. Gate Charge WaveformVGQG-5VQGSQGD 10%VGStD(ON)tRtD(OFF)tFChargeQ www.unisonic.com.tw QW-R502-108,A UNISONIC TECHNOLOGIES CO., LTD 4 of 5 元器件交易网www.cecb2b.com

UT2327 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice. www.unisonic.com.tw QW-R502-108,A UNISONIC TECHNOLOGIES CO., LTD 5 of 5