专利名称：Method for fabricating a p-type graded
composition ohmic contact for p-type II-VIsemiconductors
发明人：QIU, Jun,DePUYDT, James, M.,CHENG,
Hwa,HAASE, Michael, A.
申请号：EP94906658.3申请日：19940118公开号：EP0683924B1公开日：20020502
摘要：A II-VI laser diode including a substrate, a device layer of p-type II-VIsemiconductor, and electrode and an ohmic contact layer between the electrode anddevice layer. The ohmic contact layer comprises a graded composition semiconductorcompound including ZnTe. The relative amount of ZnTe in the semiconductor compoundincreases with increasing distance of the ohmic contact layer from the device layer. In afirst embodiment the ohmic contact layer comprises a graded composition
semiconductor alloy including the semiconductor compound of the device layer andZnTe. The amount of ZnTe in the alloy increases with increasing distance of the ohmiccontact layer from the device layer in the first embodiment. In a second embodiment theohmic contact layer includes layers of ZnTe spaced between layers of the semiconductorcompound of the device layer. The thickness of the layers of ZnTe increases, or thethickness of the layers of the semiconductor compound of the device layer decreases,with increasing distance of the ohmic contact layer from the device layer in the secondembodiment.
申请人：MINNESOTA MINING AND MANUFACTURING COMPANY
代理机构：VOSSIUS & PARTNER
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