Contact structure of semiconductor device

专利名称：Contact structure of semiconductor device发明人：Sung-Li Wang,Ding-Kang Shih,Chin-Hsiang

Lin,Sey-Ping Sun,Clement Hsingjen Wann

申请号：US14609082申请日：20150129公开号：US09099494B2公开日：20150804

专利附图：

摘要：The invention relates to a contact structure of a semiconductor device. Anexemplary structure for a contact structure for a semiconductor device comprises asubstrate comprising a major surface and a trench below the major surface; a strained

material filling the trench, wherein a lattice constant of the strained material is differentfrom a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having anopening over the strained material, wherein the opening comprises dielectric sidewallsand a strained material bottom; a semiconductor layer on the sidewalls and bottom ofthe opening; a dielectric layer on the semiconductor layer; and a metal layer filling anopening of the dielectric layer.

申请人：Taiwan Semiconductor Manufacturing Company, Ltd.

地址：Hsin-Chu TW

国籍：TW

代理机构：Slater & Matsil, L.L.P.

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