TP806

OPTOINTERRUPTERFeatures

▪Non-contactswitching.

▪FordirectPCboardordual-in-linesocketmounting.▪Fastswitchingspeed.

Application

▪Scanner

▪Edge,PositionDetections▪FAXmachine▪Counter

Description

TheTP806seriesconsistofGalliumArsenideinfraredemittingdiodeandaNPNsilliconphototransistormountedinablackplastichousing.Phototransistorswitchingtakesplacewheneveranopaqueobjectpassesthroughtheslot.TheseseriesaredesignedfordirectsolderingintoPCboardormountinginstandarddual-in-linesocket.

Switchingtimemeasurementcircuit

SIVAGOSEMICONDUCTORCO.,LTD.

OPTOINTERRUPTERDATASHEETPACKAGEDIMENSIONS

NOTES:

1.Alldimensionsareinmillimeters(inches).

2.Toleranceis±0.25mm(.010\")unlessotherwisenoted.

3.Leadspacingismeasuredwheretheleadsemergefromthepackage.PartNo.:TP806DATASHEET

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OPTOINTERRUPTERDATASHEETABSOLUTEMAXIMUMRATINGSATTA=25℃

PARAMETER

IRDiodeContinuousForwardCurrentIRDiodeReverseVoltageTransistorCollectorCurrantTransistorPowerDissipationIRDiodePeakPowerCurrant(PulseWide=1μS,300pps)DiodePowerDissipation

PhototransistorCollector-EmitterVoltagePhototransistorEmitter-CollectorVoltageOperatingTemperatureRangeStorageTemperatureRange

MAXIMUMRATING

505201003175305

-40℃to+85℃-50℃to+100℃

UNITmAVmAmWAmWVV

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SIVAGOSEMICONDUCTORCO.,LTD.

OPTOINTERRUPTERDATASHEETELECTRICALOPTICALCHARACTERISTICSATTA=25℃

PARAMETER

INPUTLEDForwardVoltageReverseCurrent

OUTPUTPHOTOTRANSISTORCollector-Emitter

BreakdownVoltageEmitter-Collector

BreakdownVoltageCollector-Emitter

DarkCurrentCOUPLERCollector-Emitter

SaturationVoltageCurrentTransferRatio

VCE(SAT)

0.4

0.8

VmA

IC=0.2mAIF=20mAVCE=5VIF=20mA

V(BR)CEOV(BR)CEOICEO305

100

VVnA

IC=1mAIE=0.1mAVCE=10V

VFIR

1.2

1.35100

VμA

IF=20mAVR=5V

SYMBOL

MIN.

TYP.

MAX.UNIT

TESTCONDITION

Ic(on)

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SIVAGOSEMICONDUCTORCO.,LTD.

OPTOINTERRUPTERDATASHEETTYPICALELECTRICAL/OPTICALCHARACTERISTICSCURVES

(25℃AmbientTemperatureUnlessOtherwiseNoted)

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SIVAGOSEMICONDUCTORCO.,LTD.

OPTOINTERRUPTERDATASHEETPackingQuantitySpecification1.200Pcs/1Bag,8Bag/1Box2.4Boxes/1CartonLabelFormSpecification

‧PRODUCT:PartNumber

‧CODENO.:ProductSerialNumber‧QTY:PackingQuantity‧LOTNo:LotNumber‧REMARKS:Remarks

NotesLeadForming

1.Duringleadframebending,theleadframeshouldbebentatadistancemorethan3mmfrombottomoftheepoxy.

Note:MustfixleadframeanddonottouchepoxybeforebendingtoavoidPhotoInterrupterbroken.

2.Leadformingshouldbedonebeforesoldering.

3.AvoidstressingthePhotoInterrupterpackageduringleadsforming.ThestresstothebasemaydamagethecharacteristicsofPhotoInterrupter,oritmaybreakthePhotoInterrupter.4.CutthePhotoInterrupterleadframeatroomtemperature.CuttingtheleadframeathightemperaturesmaycausefailureofthePhotoInterrupter.

5.WhenmountingthePhotoInterrupterontoaPCB,thePCBholesmustbealignedexactlywiththeleadpositionofthePhotoInterrupter.IfthePhotoInterrupteraremountedwithstressatTheleads,itcausesdeteriorationoftheepoxyresinandthiswilldegradethePhotoInterrupter.

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OPTOINTERRUPTERDATASHEETSoldering

1.Carefulattentionshouldbepaidduringsoldering.Whensoldering,leavemorethan3mmfromsolderjointtoepoxybulb,andsolderingbeyondthebaseofthetiebarisrecommended.

2.Recommendedsolderingconditions:

HandSoldering

Temp.attipofironSolderingtimeDistancejointtoepoxybulb)300°CMax.(30WMax.)3secMax.3mmMin.(FromsolderDistancetoepoxybulb)Preheattemp.Bathtemp.&timeDIPSoldering

100°CMax.(60secMax.)260Max.,5secMax3mmMin.(Fromsolderjoint3.Recommendedsolderingprofile

4.AvoidingapplyinganystresstotheleadframewhilethePhotoInterrupterareathightemperatureparticularlywhensoldering.

5.Dipandhandsolderingshouldnotbedonemorethanonetime

6.AftersolderingthePhotoInterrupter,theepoxybulbshouldbeprotectedfrommechanicalshockorvibrationuntilthePhotoInterrupterreturntoroomtemperature.

7.Arapid-rateprocessisnotrecommendedforcoolingthePhotoInterrupterdownfromthepeaktemperature.

8.Althoughtherecommendedsolderingconditionsarespecifiedintheabovetable,diporhandsolderingatthelowestpossibletemperatureisdesirableforthePhotoInterrupter.

9.Wavesolderingparametermustbesetandmaintainaccordingtorecommendedtemperatureanddwelltimeinthesolderwave.PartNo.:TP806DATASHEET

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