2SK3019
Transistor
2.5V Drive Nch MOS FET
2SK3019
zStructure
Silicon N-channel MOSFET
zApplications
Interfacing, switching (30V, 100mA)
zFeatures
1) Low on-resistance. 2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for portable equipment.
4) Drive circuits can be simple. 5) Parallel use is easy.
zPackaging specifications
Package TypeCodeBasic ordering unit(pieces)2SK3019TapingTL3000zDimensions (Unit : mm)
EMT31.60.3(3)0.70.550.8(2)(1)1.60.20.50.51.00.20.15(1)Source(2)Gate(3)DrainAbbreviated symbol : KN0.1Min.
zEquivalent circuit Drain
zAbsolute maximum ratings (Ta=25°C)
ParameterDrain-source voltageGate-source voltageDrain currentContinuousPulsedSymbolVDSSVGSSIDIDP∗1PD∗2TchTstgLimits30±20±100±400150150−55 to +150UnitVVmAmAmW°C°CGate∗ Gate Protection DiodeSource∗A protection diode is included between the gateTotal power dissipationChannel temperatureStorage temperatureand the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltagesare exceeded.
∗1 Pw≤10µs, Duty cycle≤1%∗2 With each pin mounted on the recommended lands.
zThermal resistance
ParameterChannel to ambient∗ With each pin mounted on the recommended lands.SymbolRth(ch-a)∗ Limits833Unit°C / W
Rev.C 1/3
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2SK3019
Transistor
zElectrical characteristics (Ta=25°C)
ParameterGate-source leakageDrain-source breakdown voltageZero gate voltage drain currentGate threshold voltageStatic drain-source on-stateresistanceForward transfer admittanceInput capacitanceOutput capacitanceReverse transfer capacitanceTurn-on delay timeRise timeTurn-off delay timeFall timeSymbolIGSSV(BR)DSSIDSSVGS(th)RDS(on)RDS(on)|Yfs|CissCossCrsstd(on)trtd(off)tfMin.−30−0.8−−20−−−−−−−Typ.−−−−57−139415358080Max.±1−1.01.5813−−−−−−−−UnitµAVµAVΩΩmspFpFpFnsnsnsnsConditionsVGS=±20V, VDS=0VID=10µA, VGS=0VVDS=30V, VGS=0VVDS=3V, ID=100µAID=10mA, VGS=4VID=1mA, VGS=2.5VID=10mA, VDS=3VVDS=5VVGS=0Vf=1MHzID=10mA, VDD 5VVGS=5VRL=500ΩRG=10Ω
zElectrical characteristic curves
GATE THRESHOLD VOLTAGE : VGS(th) (V) 0.154VDRAIN CURRENT : ID (A)
3V200m100m DRAIN CURRENT : ID (A)3.5VTa=25°CPulsedVDS=3VPulsed
250m20m10m5m2m1m0.5mVDS=3VID=0.1mAPulsed
1.50.12.5V10.052VVGS=1.5VTa=125°C75°C25°C−25°C0.50.2m00123450.1m012340−50−250255075100125150DRAIN-SOURCE VOLTAGE : VDS (V)GATE-SOURCE VOLTAGE : VGS (V)CHANNEL TEMPERATURE : Tch (°C)Fig.1 Typical output characteristicsFig.2 Typical transfer characteristicsFig.3 Gate threshold voltage vs. channel temperature
50STATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS(on) (Ω)20105Ta=125°C75°C25°C−25°CSTATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS(on) (Ω)20105STATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS(on) (Ω)VGS=4VPulsed
50Ta=125°C75°C25°C−25°CVGS=2.5VPulsed
15Ta=25°CPulsed
10210.50.0010.002210.50.0010.0025ID=0.1AID=0.05A0.0050.010.020.050.10.20.50.0050.010.020.050.10.20.5005101520DRAIN CURRENT : ID (A)DRAIN CURRENT : ID (A)GATE-SOURCE VOLTAGE : VGS (V)Fig.4 Static drain-source on-state resistance vs. drain current (Ι)Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ)Fig.6 Static drain-source on-state resistance vs. gate-source voltage
Rev.C 2/3
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2SK3019
Transistor
9STATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS(on) (Ω)REVERSE DRAIN CURRENT : IDR (A)876543210−50−250255075ID=100mAVGS=4VPulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)0.5VDS=3VPulsed
200m100m50m20m10m5m2m1m0.5m0.2m0.1m0.20.10.050.020.010.0050.002Ta=−25°C25°C75°C125°CVGS=0VPulsed
ID=50mATa=125°C75°C25°C−25°C1001251500.0010.00010.00020.00050.0010.0020.0050.010.020.050.10.20.500.511.5CHANNEL TEMPERATURE : Tch (°C)DRAIN CURRENT : ID (A)SOURCE-DRAIN VOLTAGE : VSD (V)Fig.7 Static drain-source on-state resistance vs. channel temperatureFig.8 Forward transfer admittance vs. drain currentFig.9 Reverse drain current vs.source-drain voltage (Ι)
REVERSE DRAIN CURRENT : IDR (A)200m100m50m20m10m5m2m1m0.5m0.2m0.1mVGS=4VTa=25°CPulsed
5020CAPACITANCE : C (pF)Ta=25°Cf=1MHZVGS=0V
SWITHING TIME : t (ns)1000500tftd(off)Ciss105200100502010520.10.2Ta=25°CVDD=5VVGS=5VRG=10ΩPulsed
0VCossCrss210.50.1trtd(on)00.511.50.20.51251020500.5125102050100SOURCE-DRAIN VOLTAGE : VSD (V)DRAIN-SOURCE VOLTAGE : VDS (V)DRAIN CURRENT : ID (mA)Fig.10 Reverse drain current vs.source-drain voltage (ΙΙ)Fig.11 Typical capacitance vs. drain-source voltageFig.12 Switching characteristics (See Figures 13 and 14 forthe measurement circuitand resultant waveforms)
zSwitching characteristics measurement circuit
Pulse width50%10%10%90%50%VGSIDD.U.T.RLVDSVGSVDSRG10%90%90%td (off)tftoffVDDtd (on)tontrFig.13 Switching time measurement circuit
Fig.14 Switching time waveforms
Rev.C 3/3
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Appendix
NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be separately delivered.Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuitsand deciding upon circuit constants in the set.Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of anythird party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices.Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer.Products listed in this document are no antiradiation design.The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys).Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.About Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to \"objective\" criteria or an \"informed\" (by MITI clause)on the basis of \"catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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