IRF1405

AUTOMOTIVE MOSFET

Typical Applications

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IRF1405

HEXFET® Power MOSFET

DElectric Power Steering (EPS)Anti-lock Braking System (ABS)Wiper ControlClimate ControlPower Door

Advanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating

175°C Operating TemperatureFast Switching

Repetitive Avalanche Allowed up to Tjmax

GVDSS = 55VRDS(on) = 5.3mΩBenefits

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SID = 169A󰂆Description

Specifically designed for Automotive applications, thisStripe Planar design of HEXFET® Power MOSFETsutilizes the lastest processing techniques to achieveextremely low on-resistance per silicon area. Additionalfeatures of this HEXFET power MOSFET are a 175°Cjunction operating temperature, fast switching speedand improved repetitive avalanche rating. These benefitscombine to make this design an extremely efficient andreliable device for use in Automotive applications and awide variety of other applications.

TO-220AB

Absolute Maximum Ratings

Parameter

ID @ TC = 25°CID @ TC = 100°CIDM

PD @TC = 25°CVGSEASIAREARdv/dtTJTSTG

Continuous Drain Current, VGS @ 10VContinuous Drain Current, VGS @ 10VPulsed Drain Current 󰂁Power DissipationLinear Derating FactorGate-to-Source Voltage

Single Pulse Avalanche Energy󰂂Avalanche Current

Repetitive Avalanche Energy󰂇Peak Diode Recovery dv/dt 󰂃Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 secondsMounting Torque, 6-32 or M3 screw

Max.

169󰂆118󰂆6803302.2 ± 20560

See Fig.12a, 12b, 15, 16

5.0

-55 to + 175300 (1.6mm from case )10 lbf•in (1.1N•m)

Units

AWW/°CVmJAmJV/ns°C

Thermal Resistance

Parameter

RθJCRθCSRθJA

Junction-to-Case

Case-to-Sink, Flat, Greased SurfaceJunction-to-Ambient

Typ.

–––0.50–––

Max.

0.45–––62

Units

°C/W

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IRF1405