专利内容由知识产权出版社提供
专利名称：RRAM device
发明人：Ching-Pei Hsieh,Chung-Yen Chou,Shih-Chang
Liu
申请号：US14713213申请日：20150515公开号：US09431603B1公开日：20160830
专利附图：
摘要：The present disclosure relates to an integrated circuit device having an RRAMcell, and an associated method of formation. In some embodiments, the integrated circuitdevice has a bottom electrode disposed over a lower metal interconnect layer. The
integrated circuit device also has a resistance switching layer with a variable resistancelocated on the bottom electrode, and a top electrode located over the resistanceswitching layer. The integrated circuit device also has a spacer having a lateral portionthat surrounds the bottom electrode at a position that is vertically disposed between theresistance switching layer and a bottom etch stop layer and a vertical portion abuttingsidewalls of the resistance switching layer and the top electrode. The integrated circuitdevice also has a top etch stop layer located over the bottom etch stop layer abuttingsidewalls of the spacer and overlying the top electrode.
申请人：Taiwan Semiconductor Manufacturing Co., Ltd.
地址：Hsin-Chu TW
国籍：TW
代理机构：Eschweiler & Associates, LLC
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