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专利名称：Fet with stable threshold voltage and
method of manufacturing the same
发明人：Ilderem, Vida,Kaneshiro, Michael H.,Dow,
Diann
申请号：EP96110587.1申请日：19960701公开号：EP0752722B1公开日：20021009
摘要：A low voltage field effect transistor structure (20) is provided with a thresholdvoltage that is tolerant of process variations that alter the location of a source implantregion (41). A first halo region (33) and a second halo region (36) are formed adjacent tosource region (41) such that after subsequent thermal processing, a constant dopingprofile of opposite conductivity as source region (41) is formed in the channel region (23)adjacent the source region (41). The embodiments can be formed either adjacent to onlythe source region (41) to create a unilateral device, or the doping profile can be formedadjacent to both source region (41) and a drain region (40) to produce a bilateral device.An additional embodiment forms a second implant region in source region (41) to reducejunction leakage and capacitance.
申请人：MOTOROLA INC
地址：US
国籍：US
代理机构：Hudson, Peter David
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