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专利名称：Methods of forming capacitors, and
methods of forming DRAM circuitry
发明人：Martin Ceredig Roberts,Christophe Pierrat申请号：US10817548申请日：20040402公开号：US07071058B2公开日：20060704
专利附图：
摘要：Capacitors, DRAM circuitry, and methods of forming the same are described. Inone embodiment, a capacitor comprises a first container which is joined with a substratenode location and has an opening defining a first interior area. A second container is
joined with the node location and has an opening defining a second interior area. Theareas are spaced apart from one another in a non-overlapping relationship. A dielectriclayer and a conductive capacitor electrode layer are disposed operably proximate thefirst and second containers. In another embodiment, the first and second containers aregenerally elongate and extend away from the node location along respective first andsecond central axes. The axes are different and spaced apart from one another. In yetanother embodiment, a conductive layer of material is disposed over and in electricalcommunication with a substrate node location. The layer of material has an outer surfacewith a first region and a second region spaced apart from the first region. A firstcontainer is formed over and in electrical communication with the first region and asecond container is formed over and in electrical communication with the second region.In yet another embodiment, the first and second containers define container volumeswhich are discrete and separated from one another.
申请人：Martin Ceredig Roberts,Christophe Pierrat
地址：Boise ID US,Hsin-Chu TW
国籍：US,TW
代理机构：Wells St. John P.S.
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