专利内容由知识产权出版社提供
专利名称：Semiconductor device including a multi-channel fin field effect transistor andmethod of fabricating the same
发明人：Sungmin Kim,Donggun Park,Eunjung
Yoon,Semyeong Jang,KeunnamKim,Yongchul Oh
申请号：US11033526申请日：20050112
公开号：US20050285204A1公开日：20051229
专利附图：
摘要：In a semiconductor device, and a method of fabricating the same, thesemiconductor device includes a semiconductor substrate having a cell region and aperipheral circuit region, a portion of the semiconductor substrate in the cell region andin the peripheral circuit region including an isolation region defining an active region, aportion of the active region protruding above an upper surface of the isolation region todefine at least two active channels, a gate dielectric layer formed over the active regionof the semiconductor substrate including the at least two protruding active channels, agate electrode formed over the gate dielectric layer and the isolation region of thesemiconductor substrate, and a source/drain region formed in the active region of thesemiconductor substrate on either side of the gate electrode.
申请人：Sungmin Kim,Donggun Park,Eunjung Yoon,Semyeong Jang,KeunnamKim,Yongchul Oh
地址：Yongin-city KR,Sungnam-city KR,Seoul KR,Anyang-City KR,Seoul KR,Suwon-CityKR
国籍：KR,KR,KR,KR,KR,KR
更多信息请下载全文后查看
