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专利名称：Semiconductor device with modified channel
compressive stress
发明人：Chien-Chao Huang,Tone-Xuan Chung,Cheng-Chuan Huang,Fu-Liang Yang
申请号：US10627849申请日：20030725公开号：US06975006B2公开日：20051213
专利附图：
摘要：A semiconductor device includes a substrate and a gate region on top of asubstrate. First and second gate sidewall liners are situated on first and second sides of
the gate region respectively, the first and second sidewall liners having a vertical partcontacting sidewalls of the gate region and a horizontal part contacting the substrate.First and second recessed spacers are situated on top of the first and second sidewallliners respectively. The height of the first and second spacers is lower than the height ofthe gate sidewall liner whereas the width of the horizontal part of the sidewall liner isshorter than the width of the spacer.
申请人：Chien-Chao Huang,Tone-Xuan Chung,Cheng-Chuan Huang,Fu-Liang Yang
地址：Hsin-Chu TW,Kaohsiung TW,Kinmen TW,Hsin-Chu TW
国籍：TW,TW,TW,TW
代理机构：Duane Morris LLP
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