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Electrically programmable memory element

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专利名称:Electrically programmable memory element发明人:TYLER LOWREY,STEPHEN J.

HUDGENS,PATRICK KLERSY

申请号:AU7597101申请日:20010723公开号:AU7597101A公开日:20020205

摘要:An electrically operated programmable resistance memory element. In oneembodiment of the invention the memory element includes an electrical contact havingat least a first region with a first resistivity and a second region with a second resistivityhigher than the first resistance. The more resistive second region is preferably adjacentto the memory material. In another embodiment of the invention the memory elementincludes an electrical contact having a raised portion extending to an end adjacent to thememory material.

申请人:OVONYX, INC.

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