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专利名称：Method for adjusting the threshold of a
read-only memory to achieve lowcapacitance and high breakdown voltage
发明人：Giancarlo Ginami,Enrico Laurin,Silvia
Lucherini,Bruno Vajana
申请号：US08/139800申请日：19931019公开号：US054887A公开日：19960123
摘要：A method of manufacture of a low-capacitance programmed cell structure forread-only memory circuits comprises a field-effect transistor having conventional sourceand drain regions separated by a channel region overlaid by the gate of the transistor.This ROM memory cell is programmed by a channel implant extending only from thesource region for a selected distance into the channel region.
申请人：SGS-THOMSON MICROELECTRONICS S.R.L.
代理人：David V.Seed and Berry Carlson
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