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专利名称：Plasma processing method
发明人：Yoshiharu Inoue,Tetsuo Ono,Michikazu
Morimoto,Masaki Fujii,Masakazu Miyaji
申请号：US14452578申请日：20140806公开号：US09349603B2公开日：20160524
专利附图：
摘要：A plasma processing method in which a stable process region can be ensured ina wide range, from low microwave power to high microwave power. The plasmaprocessing method includes making production of plasma easy in a region in which
production of plasma by continuous discharge is difficult, and plasma-processing anobject to be processed, with the generated plasma, wherein the plasma is produced bypulsed discharge in which ON and OFF are repeated, radio-frequency power for
producing the pulsed discharge, during an ON period, is a power to facilitate productionof plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlledso that an average power of the radio-frequency power per cycle is power in the region inwhich production of plasma by continuous discharge is difficult.
申请人：HITACHI HIGH-TECHNOLOGIES CORPORATION
地址：Tokyo JP
国籍：JP
代理机构：Baker Botts, L.L.P.
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