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专利名称：Contact structure of semiconductor device发明人：Cheng-Hsien Wu,Chih-Hsin Ko,Clement
Hsingjen Wann
申请号：US134272申请日：20120323公开号：US08716765B2公开日：20140506
专利附图：
摘要：A contact structure for a semiconductor device includes a substrate comprisinga major surface and a cavity. A bottom surface of the cavity is lower than the majorsurface. The contact structure also includes a strained material in the cavity, and a lattice
constant of the strained material is different from lattice constant of the substrate. Thecontact structure also includes a first metal layer over the strained material, a dielectriclayer over the first metal layer, and a second metal layer over the dielectric layer. Thedielectric layer has a thickness ranging from 1 nm to 10 nm.
申请人：Cheng-Hsien Wu,Chih-Hsin Ko,Clement Hsingjen Wann
地址：Hsinchu TW,Fongshan TW,Carmel NY US
国籍：TW,TW,US
代理机构：Lowe Hauptman & Ham, LLP
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